Description
The IRFR4510TRPBF is a high-performance N-channel MOSFET manufactured by Infineon Technologies. This MOSFET features a Drain-Source Breakdown Voltage (Vds) of 100V and a Continuous Drain Current (Id) of 63A, making it suitable for high-power applications. With a low Drain-Source Resistance (Rds On) of 13.9mOhms, it exhibits efficient power handling and minimal power losses.The MOSFET operates in enhancement mode and has a Gate-Source Voltage (Vgs) range of -20V to +20V, with a Gate-Source Threshold Voltage (Vgs th) of 3V. It offers a Gate Charge (Qg) of 81nC, contributing to swift switching characteristics. The device operates reliably within a temperature range of -55C to +175C, ensuring performance in various environments.
The IRFR4510TRPBF comes in a TO-252-3 surface-mount package, offering ease of installation on circuit boards. It is part of the StrongIRFET series, known for its robustness and efficiency. The MOSFET is configured as a single-channel device and is available in reel, cut tape, and MouseReel packaging options.With a forward transconductance of 62 S, the MOSFET exhibits excellent signal amplification capabilities. It has a fast rise time of 42ns and a fall time of 34ns, making it suitable for high-speed switching applications.Enhance your electronic designs with the reliable and powerful IRFR4510TRPBF N-channel MOSFET, designed by Infineon Technologies for demanding applications.
