Description
The IRFR4105TRPBF is a high-performance N-channel MOSFET manufactured by Infineon Technologies. It is built using Silicon (Si) technology and comes in a surface-mount SMD/SMT package (TO-252-3). This MOSFET is designed for enhancement mode operation.
With a drain-source breakdown voltage (Vds) of 55 volts, it can continuously handle a drain current (Id) of up to 27 amps. The drain-source resistance (Rds On) is only 45 milliohms, making it highly efficient in controlling electricity flow. The gate-source voltage (Vgs) ranges from -20 volts to +20 volts, and the gate-source threshold voltage (Vgs th) is 4 volts.The IRFR4105TRPBF MOSFET offers a gate charge (Qg) of 34 nanocoulombs, which allows for quick switching and efficient performance. Its fall time is 40 nanoseconds, and the rise time is 49 nanoseconds, ensuring rapid response in electronic circuits.
This MOSFET has a power dissipation (Pd) of 68 watts, making it suitable for applications that require high power handling. The forward transconductance (minimum) is 6.5 Siemens.Operating in a wide temperature range, it can withstand temperatures from -55°C to +175°C. The compact package has dimensions of 6.5mm in length and 2.3mm in height.The IRFR4105TRPBF MOSFET is available in different packaging options, including Reel, Cut Tape, and MouseReel, providing flexibility for various assembly processes.
