Description
The IRFR3910TRPBF is a high-performance N-channel MOSFET from Infineon Technologies. It is built using Silicon (Si) technology and comes in a surface-mount style package, TO-252-3. This MOSFET is designed for enhancement mode operation.
With a drain-source breakdown voltage (Vds) of 100V, it can continuously handle a drain current (Id) of 15A. The drain-source resistance (Rds On) is low, measuring 115mOhms, ensuring efficient power handling. The gate-source voltage (Vgs) ranges from -20V to +20V, and the gate-source threshold voltage (Vgs th) is 1.8V. The MOSFET features a gate charge (Qg) of 29.3nC, contributing to its fast switching capabilities.
The IRFR3910TRPBF is suitable for a wide temperature range, with a minimum operating temperature of -55°C and a maximum operating temperature of +175°C. Its power dissipation (Pd) is rated at 52W. This MOSFET is configured as a single channel device.For packaging options, it is available in Reel, Cut Tape, and MouseReel forms. It has a height of 2.3mm and a length of 6.5mm.
