Description
The IRFR120NTRPBF is a powerful N-channel MOSFET manufactured by Infineon. It falls under the MOSFET category and utilizes silicon (Si) technology. This Surface Mount Device (SMD) MOSFET comes in a TO-252-3 package, commonly known as DPAK.
Featuring N-channel transistor polarity, it offers a high Vds (Drain-Source Breakdown Voltage) of 100V, allowing it to withstand considerable voltage levels. The continuous drain current (Id) it can handle is 9.4A, making it suitable for applications requiring high current-carrying capabilities.
With a low Rds On (Drain-Source Resistance) of 210mOhms, the MOSFET exhibits efficient power handling characteristics and minimal power loss. The gate-source voltage (Vgs) range spans from -20V to +20V, and the gate-source threshold voltage (Vgs th) is 1.8V.
The MOSFET's gate charge (Qg) is 25nC, enabling rapid switching performance. It operates in a wide temperature range, with a minimum operating temperature of -55C and a maximum operating temperature of +175C, ensuring reliability across various environments.The IRFR120NTRPBF has a power dissipation (Pd) of 48W, contributing to its robustness in demanding applications. It operates in enhancement mode, suitable for specific circuit configurations.
This product is available in different packaging options, including Reel, Cut Tape, and MouseReel, offering flexibility for different manufacturing processes. It is a single-channel configuration, measuring 2.3mm in height and 6.5mm in length.Enhance your electronic designs with the high-performance IRFR120NTRPBF MOSFET from Infineon Technologies, delivering exceptional power handling, rapid switching capabilities, and efficient operation for various applications.
