Description
The DMN10 is a high-performance N-channel MOSFET designed for various electronic applications. With a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 12A at 25C, this MOSFET delivers efficient power handling capabilities. It features a maximum on-resistance (Rds On) of 140mOhm at a drain current of 5A and gate-source voltage (Vgs) of 10V. The gate threshold voltage (Vgs(th)) is specified as 3V at a current of 250µA. The MOSFET has a maximum gate-source voltage (Vgs) of +-20V.
The DMN10 incorporates advanced MOSFET technology and offers a gate charge (Qg) of 9.7 nC at a gate-source voltage (Vgs) of 10V. It has an input capacitance (Ciss) of 1167 pF at a drain-source voltage (Vds) of 25V. With a power dissipation of 42W (Tc), it can operate efficiently over a wide temperature range from -55C to 150C (TJ).
This MOSFET is designed for surface mount applications and comes in the TO-252-3 package (DPak) with 2 leads and a tab, also known as SC-63. It is an active product in the supplier's lineup, providing reliability and performance for various electronic designs.
