Description
The IRFR3607TRPBF is an N-channel MOSFET, a type of electronic component used in electronic circuits. It utilizes silicon (Si) technology and operates in the enhancement channel mode. This MOSFET is designed for surface-mounting (SMD/SMT) and comes in a TO-252-3 package.The MOSFET has a drain-source breakdown voltage (Vds) of 75V, allowing it to handle high voltage applications. It can continuously carry a drain current (Id) of 80A, making it suitable for high-power applications. The drain-source resistance (Rds On) is 7.34 mOhms, resulting in low power dissipation and increased efficiency.
The gate-source voltage (Vgs) range is -20V to +20V, and the gate-source threshold voltage (Vgs th) is 1.8V. The MOSFET has a gate charge (Qg) of 56nC, indicating its ability to switch on and off rapidly. The operating temperature ranges from -55C to +175C, providing reliability across various environmental conditions.This Infineon Technologies MOSFET is configured as a single channel and offers a power dissipation (Pd) of 140W. It is available in reel, cut tape, and MouseReel packaging options. The component has a compact size with dimensions of 6.5mm (length) and 2.3mm (height).
