Description
The IRFR3504ZTRPBF is an N-channel MOSFET, part of the Si technology family, used in electronic circuits. It features a drain-source breakdown voltage (Vds) of 40V and a continuous drain current (Id) of 77A, with a low drain-source resistance (Rds On) of 9 mOhms, enabling efficient power handling.This MOSFET has a gate-source voltage (Vgs) range of -20V to +20V and a gate-source threshold voltage (Vgs th) of 4V. The gate charge (Qg) required for its operation is 45 nC, and it operates in enhancement mode. Its minimum and maximum operating temperatures are -55C and +175C, respectively.
The IRFR3504ZTRPBF has a power dissipation (Pd) of 90W and a fall time of 38ns, along with a minimum forward transconductance (32S). The package style is TO-252-3 (DPAK), making it suitable for surface-mount applications. It is available in various packaging options, including reel, cut tape, and MouseReel, providing flexibility for different production needs.Enhance your electronic designs with this single-channel MOSFET from Infineon Technologies, which offers excellent performance and reliability for a wide range of applications.
