Description
The IRFR024NTRPBF is a high-performance N-Channel MOSFET manufactured by Infineon Technologies. It is a type of semiconductor device widely used in electronic circuits for various applications. This MOSFET is designed for enhancement mode operation and can efficiently control the flow of electricity between the drain and source terminals.
With a Drain-Source Breakdown Voltage (Vds) of 55V and a Continuous Drain Current (Id) rating of 17A, this MOSFET can handle substantial power requirements. It features a low Drain-Source Resistance (Rds On) of 75 mOhms, which contributes to its high efficiency in power handling.
The Gate-Source Voltage (Vgs) ranges from -20V to +20V, and the Gate-Source Threshold Voltage (Vgs th) is 1.8V. The MOSFET has a Gate Charge (Qg) of 20nC, making it suitable for rapid switching applications.
This MOSFET comes in a surface-mount SMD/SMT package style (TO-252-3), making it ideal for modern circuit board assembly techniques such as reflow soldering. It has a compact size, measuring 6.5mm in length and 2.3mm in height.
Operating within a wide temperature range of -55C to +175C, the IRFR024NTRPBF is suitable for various industrial and commercial environments.
