Description
The DMTH6004SK3-13 is an N-channel MOSFET manufactured by Diodes Incorporated. It is designed for automotive applications and complies with the AEC-Q101 standard. This MOSFET features a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 100A at 25C. The maximum on-state resistance (Rds On) is 3.8mOhm at 90A and 10V gate-source voltage (Vgs). The gate-source threshold voltage (Vgs(th)) is 4V at 250µA. The maximum gate charge (Qg) is 95.4 nC at a gate-source voltage of 10V. The MOSFET can handle a maximum gate-source voltage (Vgs) of +-20V. It has an input capacitance (Ciss) of 4556 pF at a drain-source voltage (Vds) of 30V. The device is designed for surface mounting and comes in a TO-252-3 (DPak) package, with a power dissipation of 3.9W (Ta) and 180W (Tc). The operating temperature range is -55C to 175C.
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Series: Automotive, AEC-Q101
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63
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FET Type: N-Channel
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Technology: MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss): 60V
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Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
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Drive Voltage (Max Rds On, Min Rds On): 10V
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Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
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Vgs(th) (Max) @ Id: 4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10V
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Vgs (Max): ±20V
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Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30V
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Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
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Operating Temperature: -55C ~ 175C (TJ)
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Mounting Type: Surface Mount
