Description
The IRFR3410TRPBF is a powerful N-channel MOSFET manufactured using Silicon (Si) technology. It is designed for surface-mount applications (SMD/SMT) and comes in a TO-252-3 package. As an N-channel MOSFET, it controls the flow of electricity using a negative voltage.This MOSFET has impressive specifications, with a Drain-Source Breakdown Voltage (Vds) rating of 100V and a Continuous Drain Current (Id) capacity of 31A. Its Drain-Source Resistance (Rds On) is 39 mOhms, ensuring efficient power handling. The Gate-Source Voltage (Vgs) range is between -20V and +20V, with a Gate-Source Threshold Voltage (Vgs th) of 4V.
The MOSFET's Gate Charge (Qg) is 37 nC, and it operates effectively over a wide temperature range, from -55C to +175C. With a Power Dissipation (Pd) of 110W, it can handle high-power applications. The Channel Mode is Enhancement, making it suitable for various electronic designs.The IRFR3410TRPBF is offered in different packaging options, including Reel, Cut Tape, and MouseReel. It is a product of Infineon Technologies, a reputable brand in the semiconductor industry.
