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IRFR4510TRPBF - MOSFET N-Channel 100V 63A 13.9mOhm HEXFET TO-252-3

Infineon Technologies

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SKU:
066-IRFR4510TRPBF
MPN:
IRFR4510TRPBF
Quantity
Unit Price (ex. GST)
1 - 9
₹ 88.00
10 - 99
₹ 79.20
100 or above
₹ 70.40
  • 100% Original Products
  • GST Invoice
  • Earn 3% Cashback
₹103.84 inc. GST
₹88.00 ex. GST

Technical Specifications

Brand:
Infineon Technologies
Mount:
Surface Mount
Case/Package:
DPAK
Drain to Source Voltage (Vdss):
100 V
Continuous Drain Current (ID):
63 A
Threshold Voltage:
3 V
Rds On Max:
13.9 mOhm
Gate to Source Voltage (Vgs):
- 20 V, + 20 V
Power Dissipation:
143 W
Input Capacitance:
3031 pF

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

The IRFR4510TRPBF is a high-performance N-channel MOSFET manufactured by Infineon Technologies. This MOSFET features a Drain-Source Breakdown Voltage (Vds) of 100V and a Continuous Drain Current (Id) of 63A, making it suitable for high-power applications. With a low Drain-Source Resistance (Rds On) of 13.9mOhms, it exhibits efficient power handling and minimal power losses.The MOSFET operates in enhancement mode and has a Gate-Source Voltage (Vgs) range of -20V to +20V, with a Gate-Source Threshold Voltage (Vgs th) of 3V. It offers a Gate Charge (Qg) of 81nC, contributing to swift switching characteristics. The device operates reliably within a temperature range of -55C to +175C, ensuring performance in various environments.

The IRFR4510TRPBF comes in a TO-252-3 surface-mount package, offering ease of installation on circuit boards. It is part of the StrongIRFET series, known for its robustness and efficiency. The MOSFET is configured as a single-channel device and is available in reel, cut tape, and MouseReel packaging options.With a forward transconductance of 62 S, the MOSFET exhibits excellent signal amplification capabilities. It has a fast rise time of 42ns and a fall time of 34ns, making it suitable for high-speed switching applications.Enhance your electronic designs with the reliable and powerful IRFR4510TRPBF N-channel MOSFET, designed by Infineon Technologies for demanding applications.

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