Name: IRFR3607TRPBF - MOSFET N-Channel 75V 80A 9.0mOhm 56nC Qg TO-252-3
Brand: Infineon Technologies
SKU: 066-IRFR3607TRPBF
Price: 76.7 INR
Availability: InStock

Technical Specifications

Brand:

Infineon Technologies

Mount:

Surface Mount

Case/Package:

DPAK

Drain to Source Voltage (Vdss):

75 V

Continuous Drain Current (ID):

80 A

Threshold Voltage:

1.8 V

Rds On Max:

28.5 mOhm

Gate to Source Voltage (Vgs):

- 20 V, + 20 V

Power Dissipation:

140 W

Input Capacitance:

3070 pF

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

The IRFR3607TRPBF is an N-channel MOSFET, a type of electronic component used in electronic circuits. It utilizes silicon (Si) technology and operates in the enhancement channel mode. This MOSFET is designed for surface-mounting (SMD/SMT) and comes in a TO-252-3 package.The MOSFET has a drain-source breakdown voltage (Vds) of 75V, allowing it to handle high voltage applications. It can continuously carry a drain current (Id) of 80A, making it suitable for high-power applications. The drain-source resistance (Rds On) is 7.34 mOhms, resulting in low power dissipation and increased efficiency.

The gate-source voltage (Vgs) range is -20V to +20V, and the gate-source threshold voltage (Vgs th) is 1.8V. The MOSFET has a gate charge (Qg) of 56nC, indicating its ability to switch on and off rapidly. The operating temperature ranges from -55C to +175C, providing reliability across various environmental conditions.This Infineon Technologies MOSFET is configured as a single channel and offers a power dissipation (Pd) of 140W. It is available in reel, cut tape, and MouseReel packaging options. The component has a compact size with dimensions of 6.5mm (length) and 2.3mm (height).

Resource

Datasheet