Description
The IRFR220NTRPBF is a high-quality N-channel MOSFET manufactured by Infineon. It belongs to the HEXFET family and features a drain-source breakdown voltage (Vds) of 200V, allowing it to handle higher voltage applications. The continuous drain current (Id) is rated at 5A, and the drain-source resistance (Rds On) is 600 mOhms, ensuring efficient current flow.
This MOSFET has a gate-source voltage (Vgs) range of -20V to +20V and a gate-source threshold voltage (Vgs th) of 1.8V. The gate charge (Qg) is 15nC, contributing to fast switching performance. Operating temperatures can range from -55C to +175C, making it suitable for various environments.With a power dissipation (Pd) of 43W, the IRFR220NTRPBF can handle high power levels. Its channel mode is enhancement, and it is available in single-channel configuration. The MOSFET comes in the TO-252-3 package style, suitable for surface-mount technology (SMD/SMT).
The IRFR220NTRPBF MOSFET is designed and branded by Infineon Technologies, a reputable semiconductor manufacturer. It is provided in different packaging options, including Reel, Cut Tape, and MouseReel.Enhance your electronic designs with this reliable and high-performance MOSFET, suitable for a wide range of applications with its fast rise time of 11ns and fall time of 12ns.
