Technical Specifications
Warranty Information
All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.
All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.
The DMN10 is a high-performance N-channel MOSFET designed for various electronic applications. With a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 12A at 25C, this MOSFET delivers efficient power handling capabilities. It features a maximum on-resistance (Rds On) of 140mOhm at a drain current of 5A and gate-source voltage (Vgs) of 10V. The gate threshold voltage (Vgs(th)) is specified as 3V at a current of 250µA. The MOSFET has a maximum gate-source voltage (Vgs) of +-20V.
The DMN10 incorporates advanced MOSFET technology and offers a gate charge (Qg) of 9.7 nC at a gate-source voltage (Vgs) of 10V. It has an input capacitance (Ciss) of 1167 pF at a drain-source voltage (Vds) of 25V. With a power dissipation of 42W (Tc), it can operate efficiently over a wide temperature range from -55C to 150C (TJ).
This MOSFET is designed for surface mount applications and comes in the TO-252-3 package (DPak) with 2 leads and a tab, also known as SC-63. It is an active product in the supplier's lineup, providing reliability and performance for various electronic designs.