Description
The NCE40H12K is a high-performance N-channel MOSFET designed for various electronic applications. It features a Drain Source Voltage (Vdss) rating of 40V and a Continuous Drain Current (Id) capability of 120A, making it suitable for high-power applications. The MOSFET has a Power Dissipation (Pd) rating of 120W, ensuring efficient power handling. It exhibits a low Drain Source On Resistance (RDS(on)) of 4mΩ at 10V, 20A, providing efficient current flow. The Gate Threshold Voltage (Vgs(th)) is 2.5V at 250uA, enabling precise control. This MOSFET is a valuable component for electronics projects requiring a robust N-channel MOSFET solution.
Features
- Type: N Channel
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 120A
- Power Dissipation (Pd): 120W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 4mΩ@10V,20A
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
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