Description
The IRFR6215TRPBF is a P-channel MOSFET designed for electronic circuits, featuring a drain-source breakdown voltage (Vds) of 150V and a continuous drain current (Id) of 13A. With a low drain-source resistance (Rds On) of 580mOhms, this MOSFET offers efficient power handling. It operates in enhancement mode and has a gate-source voltage range from -20V to +20V.This MOSFET comes in a surface-mount TO-252-3 package and has a gate-source threshold voltage (Vgs th) of 4V. It exhibits a gate charge (Qg) of 66nC and a forward transconductance (minimum) of 3.6 S. The fall time and rise time are 37ns and 36ns, respectively, making it suitable for high-speed switching applications.
Operating within a temperature range of -55°C to +175°C, the IRFR6215TRPBF has a power dissipation (Pd) of 110W, ensuring reliable performance even under demanding conditions. It is available in various packaging options, including reel, cut tape, and MouseReel, offering flexibility in assembly.
