Description
The IRFR5305TRPBF is a P-channel MOSFET with a drain-source breakdown voltage (Vds) of 55V and a continuous drain current (Id) of 31A. It belongs to the HEXFET technology and features a low drain-source resistance (Rds On) of 65 mOhms, which ensures efficient power handling. The gate-source voltage (Vgs) can range from -20V to +20V, and the gate-source threshold voltage (Vgs th) is 4V.This MOSFET operates in enhancement mode and has a gate charge (Qg) of 42nC, allowing for quick switching. It can function in a wide temperature range, from -55C to +175C, making it suitable for various applications. The power dissipation (Pd) is rated at 110W, ensuring reliable performance.
The IRFR5305TRPBF is packaged in a TO-252-3 case style and can be mounted using SMD/SMT techniques. It comes in various packaging options like reel, cut tape, and MouseReel. The device is manufactured by Infineon Technologies and has a single channel configuration.With a minimum fall time of 63ns and a minimum forward transconductance of 8S, this MOSFET provides reliable and efficient performance for your electronic designs. It has a compact size, measuring 2.3mm in height and 6.5mm in length, making it suitable for space-constrained applications.
