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IRFR6215TRPBF - MOSFET 1 P-CH -150V HEXFET 580mOhms 44nC TO-252-3

Infineon Technologies

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SKU:
066-IRFR6215TRPBF
MPN:
IRFR6215TRPBF
IRFR6215TRPBF - MOSFET 1 P-CH -150V HEXFET 580mOhms 44nC TO-252-3 - Infineon Technologies
Quantity
Unit Price (ex. GST)
1 - 9
₹ 88.00
10 - 99
₹ 79.20
100 or above
₹ 70.40
  • 100% Original Products
  • GST Invoice
  • Earn 3% Cashback
₹103.84 inc. GST
₹88.00 ex. GST
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Technical Specifications

Brand:
Infineon Technologies
Mount:
Surface Mount
Case/Package:
DPAK
Drain to Source Voltage (Vdss):
150 V
Continuous Drain Current (ID):
13 A
Threshold Voltage:
4 V
Rds On Max:
580 mOhm
Gate to Source Voltage (Vgs):
- 20 V, + 20 V
Power Dissipation:
110 W
Input Capacitance:
860 pF

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

The IRFR6215TRPBF is a P-channel MOSFET designed for electronic circuits, featuring a drain-source breakdown voltage (Vds) of 150V and a continuous drain current (Id) of 13A. With a low drain-source resistance (Rds On) of 580mOhms, this MOSFET offers efficient power handling. It operates in enhancement mode and has a gate-source voltage range from -20V to +20V.This MOSFET comes in a surface-mount TO-252-3 package and has a gate-source threshold voltage (Vgs th) of 4V. It exhibits a gate charge (Qg) of 66nC and a forward transconductance (minimum) of 3.6 S. The fall time and rise time are 37ns and 36ns, respectively, making it suitable for high-speed switching applications.

Operating within a temperature range of -55°C to +175°C, the IRFR6215TRPBF has a power dissipation (Pd) of 110W, ensuring reliable performance even under demanding conditions. It is available in various packaging options, including reel, cut tape, and MouseReel, offering flexibility in assembly.

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