Name: IRFR5410TRPBF - MOSFET 1 P-CH -100V HEXFET 205mOhms 70nC TO-252-3
Brand: Infineon Technologies
SKU: 066-IRFR5410TRPBF
Price: 66.08 INR
Availability: InStock

Technical Specifications

Brand:

Infineon Technologies

Mount:

Surface Mount

Case/Package:

DPAK

Drain to Source Voltage (Vdss):

100 V

Continuous Drain Current (ID):

13 A

Threshold Voltage:

4 V

Rds On Max:

205 mOhm

Gate to Source Voltage (Vgs):

- 20 V, + 20 V

Power Dissipation:

66 W

Input Capacitance:

760 pF

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

The IRFR5410TRPBF is a P-Channel MOSFET manufactured by Infineon. It is a Surface-Mount Device/Technology (SMD/SMT) with a TO-252-3 package/case. This MOSFET has a drain-source breakdown voltage (Vds) of 100V and a continuous drain current (Id) of 13A. The drain-source resistance (Rds On) is 205mOhms, providing efficient power handling.With a gate-source voltage range of -20V to +20V (Vgs), the IRFR5410TRPBF can be effectively controlled. The gate-source threshold voltage (Vgs th) is 4V, and the gate charge (Qg) is 58nC, enabling fast switching. It operates in the temperature range of -55°C to +150°C, making it suitable for various environments.

This MOSFET is configured as a single channel and operates in the enhancement mode. It has a power dissipation (Pd) of 66W, ensuring robust performance. The fall time is 46ns, and the rise time is 58ns, contributing to its quick switching capabilities.The IRFR5410TRPBF is an advanced MOSFET with forward transconductance (min) of 3.2S. Its compact size with dimensions of 6.5mm length and 2.3mm height allows for easy integration into electronic designs.

Resource

Datasheet