IRFR540ZTRPBF - MOSFET N-CH 100V 35A 28.5mOhm 39nC Qg TO-252-3

The IRFR540ZTRPBF is a powerful N-channel MOSFET designed for use in electronic circuits. With a Drain-Source Breakdown Voltage (Vds) of 100V and a Continuous Drain Current (Id) of 35A, this MOSFET can efficiently handle high power requirements. It features a low Drain-Source Resistance (Rds On) of 28.5mOhms, making it highly efficient.

The MOSFET operates with a Gate-Source Voltage (Vgs) range of -20V to +20V, and its Gate-Source Threshold Voltage (Vgs th) is 4V. It has a Gate Charge (Qg) of 59nC, which contributes to its fast switching performance. The device operates in the Enhancement mode and offers reliable performance even in challenging conditions.With a wide operating temperature range from -55°C to +175°C, the IRFR540ZTRPBF is suitable for various applications. Its Power Dissipation (Pd) capability is 91W, ensuring it can handle substantial power loads. The MOSFET comes in a TO-252-3 package and can be mounted on a circuit board using SMD/SMT techniques.

This Infineon Technologies MOSFET is configured as a single-channel device and is supplied in different packaging options, including Reel, Cut Tape, and MouseReel. Its compact size, with dimensions of 6.5mm (length) and 2.3mm (height), makes it suitable for space-constrained designs.Enhance your electronic projects with the high-performance IRFR540ZTRPBF MOSFET, capable of delivering reliable and efficient power handling. Choose this versatile MOSFET for a wide range of applications that demand robust performance.