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IRFR540ZTRLPBF - MOSFET 100V SINGLE N-CH 28.5mOhms 39nC TO-252-3

Infineon Technologies

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SKU:
066-IRFR540ZTRLPBF
MPN:
IRFR540ZTRLPBF
Quantity
Unit Price (ex. GST)
1 - 9
₹ 81.00
10 - 99
₹ 72.90
100 or above
₹ 64.80
  • 100% Original Products
  • GST Invoice
  • Earn 3% Cashback
₹95.58 inc. GST
₹81.00 ex. GST
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Technical Specifications

Brand:
Infineon Technologies
Mount:
Surface Mount
Case/Package:
DPAK
Drain to Source Voltage (Vdss):
100 V
Continuous Drain Current (ID):
35 A
Threshold Voltage:
4 V
Rds On Max:
28.5 mOhm
Gate to Source Voltage (Vgs):
- 20 V, + 20 V
Power Dissipation:
91 W
Input Capacitance:
1690 pF

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

The IRFR540ZTRLPBF is a powerful N-channel MOSFET designed for electronic circuits. It features a Drain-Source Breakdown Voltage (Vds) of 100V, allowing it to handle high voltage applications. With a Continuous Drain Current (Id) of 35A and a low Drain-Source Resistance (Rds On) of 28.5mOhms, it can efficiently handle significant currents with low power dissipation.

This MOSFET operates with a Gate-Source Voltage (Vgs) range of -20V to +20V and has a Gate-Source Threshold Voltage (Vgs th) of 4V. It offers a Gate Charge (Qg) of 59nC, making it responsive during switching. The device operates in the Enhancement Channel Mode and has a fast fall time of 34ns and rise time of 42ns.The package style is TO-252-3, also known as DPAK, suitable for surface-mount applications. It is offered by Infineon Technologies, a renowned brand in the semiconductor industry. The MOSFET's minimum operating temperature is -55C, while its maximum operating temperature is +175C.

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