Description
The IRFR3806TRPBF is an N-channel MOSFET, a type of semiconductor device used in electronic circuits. It features a drain-source breakdown voltage (Vds) of 60V and can continuously handle a drain current (Id) of up to 43A, making it suitable for high-power applications.
This MOSFET has a drain-source resistance (Rds On) of 12.6 mOhms, which results in efficient power handling and low power dissipation. The gate-source voltage (Vgs) can range from -20V to +20V, and the gate-source threshold voltage (Vgs th) is 1.8V, making it compatible with various control circuits.
The IRFR3806TRPBF operates in enhancement mode, allowing it to enhance the channel conductivity when a positive gate-source voltage is applied. It has a gate charge (Qg) of 22 nC, which indicates the amount of charge needed to control the MOSFET's switching.
This MOSFET is designed in a surface-mount TO-252-3 package, commonly known as DPAK (Drain Package). It is ideal for SMD/SMT mounting style and offers easy and reliable assembly on circuit boards.With a wide operating temperature range from -55C to +175C, the IRFR3806TRPBF can withstand harsh environmental conditions. It has a power dissipation (Pd) of 71W, ensuring stable performance even under high-load situations.
The IRFR3806TRPBF comes in different packaging options, including Reel, Cut Tape, and MouseReel, providing flexibility in handling and production. It is a single-channel configuration and belongs to Infineon Technologies' high-quality MOSFET product line.Enhance your electronic designs and power applications with the IRFR3806TRPBF, a reliable and efficient N-channel MOSFET suitable for various industrial and commercial applications.
