IRFR1205TRPBF - MOSFET 55V 1 N-CH HEXFET 27mOhms 43.3nC TO-252-3

The IRFR1205TRPBF is a powerful N-channel MOSFET designed with HEXFET technology, utilizing silicon as its core material. It is suitable for surface-mounting on electronic circuits (SMD/SMT) and comes in a TO-252-3 package. As an N-channel MOSFET, it controls the flow of electricity using a negative voltage.This MOSFET boasts impressive specifications, including a drain-source breakdown voltage (Vds) of 55V and a continuous drain current (Id) capacity of 37A. Its drain-source resistance (Rds On) is remarkably low at 27 mOhms, making it efficient in controlling electricity with minimal power loss. The gate-source voltage (Vgs) can range from -20V to +20V, and the gate-source threshold voltage (Vgs th) is 1.8V.

With a gate charge (Qg) of 43.3nC, this MOSFET demonstrates rapid switching capabilities, offering a fall time of 60ns and a rise time of 69ns. It operates effectively in a wide temperature range, from -55°C to +175°C, and can handle a power dissipation (Pd) of up to 69W.The IRFR1205TRPBF is a single-channel MOSFET with enhancement mode, providing flexibility in various electronic applications. It is supplied by Infineon Technologies, a renowned brand in the semiconductor industry.For packaging, you can choose from options like reel, cut tape, or MouseReel, depending on your production needs. The MOSFET's compact dimensions include a height of 2.3mm and a length of 6.5mm.