null

NDS0605 - MOSFET P-Channel 60V 180MA SOT-23-3

onsemi

No reviews yet Write a Review
SKU:
042-NDS0605
MPN:
NDS0605
Full Reel:
3000 (order in multiples of this to receive standard manufacturer packaging)
Quantity
Unit Price (ex. GST)
1 - 9
₹ 11.36
10 - 99
₹ 10.22
100 - 999
₹ 9.66
1000 or above
₹ 9.09
NDS0605 is a -60V, -180mA P-Channel MOSFET by onsemi featuring low RDS(on), fast switching, and high-density DMOS technology in a compact SOT-23-3 package. Ideal for low-current, high-side switching and power management applications. View full description
  • 100% Original Products
  • GST Invoice
  • Earn 3% Cashback
₹13.40 inc. GST
₹11.36 ex. GST
16 people looking at this.

Technical Specifications

Brand:
onsemi
Case/Package:
SOT-23
Mount:
Surface Mount
Number of Pins:
3
Continuous Drain Current (ID):
180 mA
Current Rating:
-180 mA
Drain To Source Breakdown Voltage:
-60 V
Drain To Source Resistance:
5 Ohm
Drain to Source Voltage (Vdss):
-60 V
Dual Supply Voltage:
-60 V
Element Configuration:
Single
Fall Time:
6.3 ns
Gate To Source Voltage (Vgs):
20 V
Input Capacitance:
79 pF
Max Junction Temperature (Tj):
150 C
Max Operating Temperature:
150 C
Max Power Dissipation:
360 mW
Min Breakdown Voltage:
60 V
Min Operating Temperature:
-55 C
Nominal Vgs:
-1.7 V
Number of Channels:
1
Resistance:
5 Ohm
Rise Time:
6.3 ns
Voltage Rating (DC):
-60 V
Full Reel Quantity:
3000

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

Resources:

Datasheet

NDS0605 - P-Channel MOSFET | -60V, -180mA, 350mW | SOT-23-3 Package

The NDS0605 from onsemi is a compact and efficient P-Channel enhancement mode MOSFET designed using proprietary high cell density DMOS technology. This advanced process provides low on-resistance (R DS(on)), fast switching performance, and rugged reliability for a wide range of low-voltage and signal-switching applications. With a drain-source voltage (V DS) of -60V, a continuous drain current of -180mA, and a peak current capability up to 1A, the NDS0605 delivers reliable operation in a space-saving SOT-23-3 surface-mount package. It is an ideal choice for low-current, high-side switching circuits and power management in compact electronic systems.

Key Features

  • Type: P-Channel enhancement mode MOSFET
  • Voltage Rating: −60V drain-to-source voltage (V DS)
  • Current Rating: Continuous drain current of −180mA, peak up to −1A
  • Low On-Resistance (R DS(on)): 5 Ohm (typ.)  V GS= −10V for reduced power loss
  • Technology: High cell density DMOS process for high efficiency and reliability
  • Voltage Controlled Device: Ideal for small-signal and high-side switching applications
  • Fast Switching Speed: Enables efficient operation in high-frequency and low-voltage circuits
  • High Saturation Current Capability: Ensures strong performance for transient loads
  • Compact Package: Small SOT-23-3 surface-mount design for space-efficient PCB layouts
  • Environmental Compliance:
  • Pb-Free, Halide-Free, and RoHS Compliant
  • Reliable Operation: Optimized for low-voltage systems requiring compact, high-efficiency switches