Name: IRFR7540TRPBF - MOSFET N-CH 60V StrongIRFET Power MOSFET TO-252-3
Brand: Infineon Technologies
SKU: 066-IRFR7540TRPBF
Price: 112.69 INR
Availability: OutOfStock

Technical Specifications

Brand:

Infineon Technologies

Mount:

Surface Mount

Case/Package:

DPAK

Drain to Source Voltage (Vdss):

60 V

Continuous Drain Current (ID):

110 A

Threshold Voltage:

3.7 V

Rds On Max:

4.8 mOhm

Gate to Source Voltage (Vgs):

- 20 V, + 20 V

Power Dissipation:

140 W

Input Capacitance:

4360 pF

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

The IRFR7540TRPBF is a powerful N-channel MOSFET from Infineon Technologies. This MOSFET belongs to the StrongIRFET family, designed with Si technology, ensuring high performance in electronic circuits. It comes in a surface-mount TO-252-3 package and offers a single channel configuration.With a drain-source breakdown voltage (Vds) of 60V, the IRFR7540TRPBF can handle continuous drain currents (Id) of up to 110A, making it suitable for demanding applications. The drain-source resistance (Rds On) is only 4.8 mOhms, contributing to its efficiency and low power dissipation.

The gate-source voltage (Vgs) ranges from -20V to +20V, and the gate-source threshold voltage (Vgs th) is 3.7V. The MOSFET has a gate charge (Qg) of 86 nC and operates efficiently in an enhancement mode.The IRFR7540TRPBF offers fast switching characteristics, with a rise time of 38 ns and a fall time of 32 ns. Its forward transconductance is a minimum of 200 S, indicating excellent signal amplification capabilities.This MOSFET can withstand a wide temperature range, operating from -55°C to +175°C, ensuring reliability in extreme conditions. With a power dissipation (Pd) capacity of 140W, it is suitable for high-power applications.

Resource

Datasheet