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IRFR5305TRPBF - MOSFET 1 P-CH -55V HEXFET 65mOhms 42nC TO-252-3

Infineon Technologies

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SKU:
066-IRFR5305TRPBF
MPN:
IRFR5305TRPBF
Quantity
Unit Price (ex. GST)
1 - 9
₹ 54.00
10 - 99
₹ 48.60
100 or above
₹ 43.20
  • 100% Original Products
  • GST Invoice
  • Earn 3% Cashback
₹63.72 inc. GST
₹54.00 ex. GST
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Technical Specifications

Brand:
Infineon Technologies
Mount:
Surface Mount
Case/Package:
DPAK
Drain to Source Voltage (Vdss):
55 V
Continuous Drain Current (ID):
31 A
Threshold Voltage:
4 V
Rds On Max:
65 mOhm
Gate to Source Voltage (Vgs):
- 20 V, + 20 V
Power Dissipation:
110 W
Input Capacitance:
1200 pF

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

The IRFR5305TRPBF is a P-channel MOSFET with a drain-source breakdown voltage (Vds) of 55V and a continuous drain current (Id) of 31A. It belongs to the HEXFET technology and features a low drain-source resistance (Rds On) of 65 mOhms, which ensures efficient power handling. The gate-source voltage (Vgs) can range from -20V to +20V, and the gate-source threshold voltage (Vgs th) is 4V.This MOSFET operates in enhancement mode and has a gate charge (Qg) of 42nC, allowing for quick switching. It can function in a wide temperature range, from -55C to +175C, making it suitable for various applications. The power dissipation (Pd) is rated at 110W, ensuring reliable performance.

The IRFR5305TRPBF is packaged in a TO-252-3 case style and can be mounted using SMD/SMT techniques. It comes in various packaging options like reel, cut tape, and MouseReel. The device is manufactured by Infineon Technologies and has a single channel configuration.With a minimum fall time of 63ns and a minimum forward transconductance of 8S, this MOSFET provides reliable and efficient performance for your electronic designs. It has a compact size, measuring 2.3mm in height and 6.5mm in length, making it suitable for space-constrained applications.

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