Name: IRFR3910TRPBF - MOSFET 100V 1 N-CH HEXFET 115mOhms 29.3nC TO-252-3
Brand: Infineon Technologies
SKU: 066-IRFR3910TRPBF
Price: 80.83 INR
Availability: InStock

Technical Specifications

Brand:

Infineon Technologies

Mount:

Surface Mount

Case/Package:

DPAK

Drain to Source Voltage (Vdss):

100 V

Continuous Drain Current (ID):

15 A

Threshold Voltage:

1.8 V

Rds On Max:

115 mOhm

Gate to Source Voltage (Vgs):

- 20 V, + 20 V

Power Dissipation:

52 W

Input Capacitance:

640 pF

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

The IRFR3910TRPBF is a high-performance N-channel MOSFET from Infineon Technologies. It is built using Silicon (Si) technology and comes in a surface-mount style package, TO-252-3. This MOSFET is designed for enhancement mode operation.

With a drain-source breakdown voltage (Vds) of 100V, it can continuously handle a drain current (Id) of 15A. The drain-source resistance (Rds On) is low, measuring 115mOhms, ensuring efficient power handling. The gate-source voltage (Vgs) ranges from -20V to +20V, and the gate-source threshold voltage (Vgs th) is 1.8V. The MOSFET features a gate charge (Qg) of 29.3nC, contributing to its fast switching capabilities.

The IRFR3910TRPBF is suitable for a wide temperature range, with a minimum operating temperature of -55°C and a maximum operating temperature of +175°C. Its power dissipation (Pd) is rated at 52W. This MOSFET is configured as a single channel device.For packaging options, it is available in Reel, Cut Tape, and MouseReel forms. It has a height of 2.3mm and a length of 6.5mm.

Resource

Datasheet