Name: IRFR3410TRPBF - MOSFET 100V SINGLE N-CH 39mOhms 37nC TO-252-3
Brand: Infineon Technologies
SKU: 066-IRFR3410TRPBF
Price: 97.94 INR
Availability: InStock

Technical Specifications

Brand:

Infineon Technologies

Mount:

Surface Mount

Case/Package:

DPAK

Drain to Source Voltage (Vdss):

100 V

Continuous Drain Current (ID):

31 A

Threshold Voltage:

4 V

Rds On Max:

39 mOhm

Gate to Source Voltage (Vgs):

- 20 V, + 20 V

Power Dissipation:

110 W

Input Capacitance:

1690 pF

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

The IRFR3410TRPBF is a powerful N-channel MOSFET manufactured using Silicon (Si) technology. It is designed for surface-mount applications (SMD/SMT) and comes in a TO-252-3 package. As an N-channel MOSFET, it controls the flow of electricity using a negative voltage.This MOSFET has impressive specifications, with a Drain-Source Breakdown Voltage (Vds) rating of 100V and a Continuous Drain Current (Id) capacity of 31A. Its Drain-Source Resistance (Rds On) is 39 mOhms, ensuring efficient power handling. The Gate-Source Voltage (Vgs) range is between -20V and +20V, with a Gate-Source Threshold Voltage (Vgs th) of 4V.

The MOSFET's Gate Charge (Qg) is 37 nC, and it operates effectively over a wide temperature range, from -55C to +175C. With a Power Dissipation (Pd) of 110W, it can handle high-power applications. The Channel Mode is Enhancement, making it suitable for various electronic designs.The IRFR3410TRPBF is offered in different packaging options, including Reel, Cut Tape, and MouseReel. It is a product of Infineon Technologies, a reputable brand in the semiconductor industry.

Resource

Datasheet