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DMN6075S-7 - MOSFET N-Channel 60V 2A SOT-23-3

Diodes Incorporated

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SKU:
010-DMN6075S-7
MPN:
DMN6075S-7
Full Reel:
3000 (order in multiples of this to receive standard manufacturer packaging)
Quantity
Unit Price (ex. GST)
1 - 9
₹ 12.31
10 - 99
₹ 11.08
100 - 999
₹ 10.46
1000 or above
₹ 9.85
DMN6075S-7 is a 60V, 2A N-Channel MOSFET by Diodes Incorporated featuring low RDS(on), fast switching, and low gate charge in a compact SOT-23-3 package. Ideal for DC-DC converters, load control, and efficient power management systems. View full description
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Technical Specifications

Brand:
Diodes Incorporated
Case/Package:
SOT-23
Number of Pins:
3
Continuous Drain Current (ID):
2 A
Drain To Source Breakdown Voltage:
60 V
Drain To Source Resistance:
85 Milliohm
Drain To Source Voltage (Vdss):
60 V
Gate To Source Voltage (Vgs):
20 V
Input Capacitance:
606 pF
Max Junction Temperature (Tj):
150 C
Max Operating Temperature:
150 C
Max Power Dissipation:
1.15 W
Min Breakdown Voltage:
60 V
Min Operating Temperature:
-55 C
Number of Channels:
1
Power Dissipation:
800 mW
Full Reel Quantity:
3000

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

Resources:

Datasheet

DMN6075S-7 - N-Channel MOSFET | 60V, 2A, 1.25W | SOT-23-3 Package

The DMN6075S-7 from Diodes Incorporated is a high-efficiency N-Channel enhancement mode MOSFET designed for power switching, load management, and DC-DC conversion applications. With a drain-source voltage (V DS) of 60V, a continuous drain current of 2A, and power dissipation up to 1.25W, this compact SOT-23-3 device delivers robust performance and superior energy efficiency. Built using advanced trench MOSFET technology, it offers low on-resistance (R DS(on)), fast switching speed, and low gate charge, ensuring minimal power loss and high reliability for compact, high-density designs.

Key Features

  • Type: N-Channel enhancement mode MOSFET
  • Voltage Rating: 60V drain-to-source voltage (V DS)
  • Current Rating: Continuous drain current of 2A
  • Power Dissipation: Up to 1.25W for efficient thermal performance
  • Low On-Resistance (R DS(on)): Reduces conduction losses and enhances power efficiency
  • Low Gate Charge: Enables high-speed switching with minimal drive power
  • Fast Switching Speed: Ideal for high-frequency power conversion and control applications
  • Low Input Capacitance: Improves switching efficiency and reduces delay
  • Low Input/Output Leakage: Ensures stable operation and low standby current consumption
  • Package: Compact SOT-23-3 surface-mount package for space-saving PCB layouts
  • Environmental Compliance:

    • Fully Lead-Free and RoHS Compliant

    • Halogen and Antimony-Free Green Device

  • Reliability: Qualified to JEDEC standards for industrial-grade durability