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2N7002ET1G - MOSFET N-Channel 60V 260MA SOT23-3

onsemi

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SKU:
042-2N7002ET1G
MPN:
2N7002ET1G
Full Reel:
3000 (order in multiples of this to receive standard manufacturer packaging)
Quantity
Unit Price (ex. GST)
1 - 9
₹ 4.99
10 - 99
₹ 4.49
100 - 999
₹ 4.24
1000 or above
₹ 3.99
2N7002ET1G is a 60V, 260mA N-Channel MOSFET by onsemi featuring low RDS(on), trench technology, fast switching, and AEC-Q101 automotive qualification in a compact SOT-23-3 package. Ideal for DC-DC converters and load switching. View full description
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Technical Specifications

Brand:
onsemi
Case/Package:
SOT-23-3
Number of Pins:
3
Continuous Drain Current (ID):
260 mA
Drain To Source Breakdown Voltage:
60 V
Drain To Source Resistance:
2.5 Ohm
Drain To Source Voltage (Vdss):
60 V
Element Configuration:
Single
Fall Time:
1.2 ns
Gate To Source Voltage (Vgs):
20 V
Input Capacitance:
26.7 pF
Max Junction Temperature (Tj):
150 C
Max Operating Temperature:
150 C
Max Power Dissipation:
300 mW
Min Breakdown Voltage:
60 V
Min Operating Temperature:
-55 C
Number of Channels:
1
Power Dissipation:
300 mW
Resistance:
2.5 Ohm
Rise Time:
1.2 ns
Full Reel Quantity:
3000

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

Resources:

Datasheet

2N7002ET1G - N-Channel MOSFET | 60V, 260mA, 350mW | SOT-23-3 Package

The 2N7002ET1G from onsemi is a high-efficiency N-Channel enhancement mode MOSFET designed using advanced trench technology for optimized performance in low-power switching, DC-DC converters, and level shifting applications. With a drain-source voltage (V DS) of 60V, a continuous drain current of 260mA, and power dissipation up to 350mW, this device provides low R DS(on), fast switching speed, and low gate charge in a compact SOT-23-3 surface-mount package. Its rugged design and AEC-Q101 qualification make it ideal for both consumer and automotive-grade applications.

Key Features

  • Type: N-Channel enhancement mode MOSFET
  • Voltage Rating: 60V drain-to-source voltage (V DS)
  • Current Rating: 260mA continuous drain current
  • Power Dissipation: Up to 350mW for compact thermal performance
  • Technology: Trench MOSFET process for low R DS(on) and superior switching performance
  • Low On-Resistance (R DS(on)): Minimizes conduction losses for higher efficiency
  • Fast Switching Speed: Ideal for high-frequency and efficient switching circuits
  • Low Input Capacitance: Enables rapid switching and low drive power requirements
  • Automotive Grade Option:
  • AEC-Q101 Qualified and PPAP Capable
  • Suitable for demanding automotive and industrial systems
  • Package: Small SOT-23-3 surface-mount package for space-saving designs
  • Environmental Compliance:
  • Pb-Free, Halogen-Free, and BFR-Free
  • Fully RoHS Compliant