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NTTFS4C25NTWG - MOSFET Single N-Channel Power 30V, 27A, WDFN-8

onsemi

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SKU:
042-NTTFS4C25NTWG
MPN:
NTTFS4C25NTWG
Full Reel:
5000 (order in multiples of this to receive standard manufacturer packaging)
NTTFS4C25NTWG N-Channel Power MOSFET 30V 27A WDFN-8 3.3×3.3mm Package by onsemi
Quantity
Unit Price (ex. GST)
1 - 9
₹ 33.19
10 - 99
₹ 29.87
100 - 999
₹ 28.21
1000 or above
₹ 26.55
NTTFS4C25NTWG is a 30V, 27A N-Channel Power MOSFET by onsemi featuring ultra-low RDS(on), optimized gate charge, and low capacitance in a compact WDFN-8 (3.3×3.3mm) package. Ideal for DC-DC converters and battery management systems. View full description
  • 100% Original Products
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₹39.16 inc. GST
₹33.19 ex. GST
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Technical Specifications

Brand:
onsemi
Case/Package:
WDFN-(3.3x3.3)
Number Of Pins:
8
Continuous Drain Current (ID):
27 A
Drain To Source Breakdown Voltage:
30 V
Drain To Source Resistance:
17 Milliohm
Drain to Source Voltage (Vdss):
30 V
Element Configuration:
Single
Fall Time:
3 ns
Gate To Source Voltage (Vgs):
20 V
Input Capacitance:
500 pF
Max Operating Temperature:
150 C
Max Power Dissipation:
20.2 W
Min Operating Temperature:
-55 C
Rise Time:
32 ns
Full Reel Quantity:
5000

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

Resources:

Datasheet

NTTFS4C25NTWG - N-Channel Power MOSFET | 30V, 27A | WDFN-8 (3.3×3.3mm) Package

The NTTFS4C25NTWG from onsemi is a high-performance single N-Channel Power MOSFET engineered for DC-DC conversion, power load switching, and notebook battery management applications. Designed using advanced trench technology, this device provides ultra-low R DS(on), optimized gate charge, and low capacitance, enabling exceptional switching efficiency and thermal performance. With a drain-source voltage (V DS) of 30V, a continuous drain current of 27A, and housed in a compact WDFN-8 (3.3×3.3mm) package, it offers high power density and excellent electrical performance for compact, high-efficiency power systems.

Key Features

  • Type: N-Channel enhancement mode Power MOSFET
  • Voltage Rating: 30V drain-to-source voltage (V DS)
  • Current Rating: Continuous drain current up to 27A
  • Low On-Resistance (R DS(on)): Minimizes conduction losses and enhances power efficiency
  • Low Capacitance: Reduces driver losses and improves high-frequency performance
  • Optimized Gate Charge (Q g): Minimizes switching losses and enhances efficiency
  • High Efficiency Design: Ideal for fast-switching and low-voltage applications
  • Package Type: Compact WDFN-8 (3.3×3.3mm) for superior thermal dissipation and board space savings
  • Environmental Compliance:
  • Pb-Free, Halogen-Free, and BFR-Free
  • Fully RoHS Compliant
  • Thermal and Electrical Reliability: Excellent performance under high current and temperature conditions

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