MMBT5551LT1G - Bipolar Transistor NPN 160V 600mA SOT-23-3

onsemi

No reviews yet Write a Review
SKU:
042-MMBT5551LT1G
MPN:
MMBT5551LT1G
Quantity
Unit Price (ex. GST)
1 - 9
₹ 3.11
10 - 99
₹ 2.80
100 or above
₹ 2.49
High voltage NPN bipolar transistor rated at 160 volt with 600 milliampere current capability suitable for driver stages and general purpose switching in compact surface mount circuits View full description
  • 100% Original Products
  • GST Invoice
  • Earn 3% Cashback
₹3.67 inc. GST
₹3.11 ex. GST

Technical Specifications

Brand:
onsemi
Case/Package:
SOT-23-3
Contact Plating:
Tin
Number of Pins:
3
Number of Terminals:
3
Weight:
4.535924 g
Collector Base Voltage (VCBO):
180 V
Collector Emitter Breakdown Voltage:
160 V
Collector Emitter Saturation Voltage:
200 mV
Collector Emitter Voltage (VCEO):
160 V
Current Rating:
600 mA
Element Configuration:
Single
Emitter Base Voltage (VEBO):
6 V
hFE Min:
30
Max Breakdown Voltage:
160 V
Max Collector Current:
60 mA
Max Junction Temperature (Tj):
150 C
Max Operating Temperature:
150 C
Max Power Dissipation:
300 mW
Min Operating Temperature:
-55 C
Number of Elements:
1
Packaging:
Tape and Reel
Polarity:
NPN
Power Dissipation:
225 mW
Voltage Rating (DC):
160 V
Height:
1.11 mm
Length:
2.9 mm
Width:
1.3 mm

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

Resources:

Datasheet

High Voltage NPN Bipolar Transistor for Driver Stages and General Purpose Switching Circuits

The MMBT5551LT1G NPN bipolar transistor is designed for high voltage signal amplification and reliable switching in compact electronic designs. With a collector emitter voltage rating of 160 volt and a continuous collector current capability of 600 milliampere it is well suited for driver stages level shifting circuits and high voltage control applications. The SOT 23 3 surface mount package allows efficient PCB utilisation while supporting automated assembly processes.

This transistor is commonly used in industrial control systems power supply circuits audio driver stages and general purpose amplification blocks where higher voltage tolerance is required. Its electrical characteristics make it suitable for both analogue and switching roles in consumer electronics and industrial equipment. The MMBT5551LT1G is a dependable choice for designers seeking a compact NPN transistor with strong voltage handling capability.

Key Features

  • NPN Bipolar Transistor
    Suitable for high voltage signal amplification and switching
  • High Voltage Capability
    Supports circuit operation up to 160 volt
  • Strong Current Handling
    Designed for collector current up to 600 milliampere
  • Stable Electrical Performance
    Ensures reliable operation in driver and control circuits
  • Compact SOT 23 3 Package
    Ideal for space efficient surface mount PCB designs