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DMN601K-7 - MOSFET N-Channel 60V 300mA SOT-23-3

Diodes Incorporated

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SKU:
010-DMN601K-7
MPN:
DMN601K-7
Full Reel:
3000 (order in multiples of this to receive standard manufacturer packaging)
DMN601K-7 N-Channel MOSFET 60V 300mA SOT-23-3 Package by Diodes Incorporated
Quantity
Unit Price (ex. GST)
1 - 9
₹ 4.97
10 - 99
₹ 4.47
100 - 999
₹ 4.22
1000 or above
₹ 3.98
DMN601K-7 is a 60V, 300mA N-Channel MOSFET by Diodes Incorporated featuring low RDS(on), fast switching, and low capacitance in a compact SOT-23-3 package. Ideal for motor control, backlighting, and high-efficiency power management applications. View full description
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Technical Specifications

Brand:
Diodes Incorporated
Case/Package:
SOT-23
Mount:
Surface Mount
Number of Pins:
3
Continuous Drain Current (ID):
300 mA
Drain To Source Resistance:
2 Ohm
Drain To Source Voltage (Vdss):
60 V
Element Configuration:
Single
Gate To Source Voltage (Vgs):
20 V
Input Capacitance:
50 pF
Max Operating Temperature:
150 C
Max Power Dissipation:
350 mW
Min Breakdown Voltage:
60 V
Min Operating Temperature:
-65 C
Number of Channels:
1
Resistance:
2 Ohm
Voltage Rating (DC):
60 V
Full Reel Quantity:
3000

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

Resources:

Datasheet

DMN601K-7 - N-Channel MOSFET | 60V, 300mA, 350mW | SOT-23-3 Package

The DMN601K-7 from Diodes Incorporated is a compact, high-efficiency N-Channel enhancement mode MOSFET optimized for power management, motor control, and backlighting applications. Designed using advanced trench MOSFET technology, it delivers low on-resistance (R DS(on)), fast switching speed, and low gate capacitance, ensuring excellent energy efficiency and performance in low-current, high-efficiency systems. With a drain-source voltage (V DS) of 60V, a continuous drain current of 300mA, and power dissipation up to 350mW, this MOSFET provides reliable and consistent operation in compact circuits. The SOT-23-3 surface-mount package offers excellent thermal performance and space-saving benefits for modern electronic designs.

Key Features

  • Type: N-Channel enhancement mode MOSFET
  • Voltage Rating: 60V drain-to-source voltage (V DS)
  • Current Rating: 300mA continuous drain current
  • Power Dissipation: Up to 350mW for compact thermal performance
  • Low On-Resistance (R DS(on)): Minimizes conduction losses for high efficiency
  • Fast Switching Speed: Enables precise control in switching and pulse-width modulation (PWM) applications
  • Low Input Capacitance: Reduces power loss and improves signal response
  • Low Gate Charge: Optimized for high-speed performance with minimal drive power
  • Low Leakage Current: Ensures stable and efficient operation in standby modes
  • Package Type: Compact SOT-23-3 package for high-density PCB designs.

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