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BSS138DW-7-F - MOSFET 2N-Channel 50V 200mA SOT-363

Diodes Incorporated

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SKU:
010-BSS138DW-7-F
MPN:
BSS138DW-7-F
Quantity
Unit Price (ex. GST)
1 - 9
₹ 7.16
10 - 99
₹ 6.44
100 - 999
₹ 6.09
1000 or above
₹ 5.73
BSS138DW-7-F is a dual 50V, 200mA N-Channel MOSFET array by Diodes Incorporated with low RDS(on), fast switching, low gate capacitance, and low leakage in a compact SOT-363 package. Ideal for load switching and signal routing. View full description
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  • GST Invoice
  • Earn 3% Cashback
₹8.45 inc. GST
₹7.16 ex. GST

Technical Specifications

Brand:
Diodes Incorporated
Case/Package:
SOT-363
Mount:
Surface Mount
Number of Pins:
6
Continuous Drain Current (ID):
200 mA
Drain To Source Breakdown Voltage:
75 V
Drain To Source Resistance:
3.5 Ohm
Drain To Source Voltage (Vdss):
50 V
Element Configuration:
Dual
Gate To Source Voltage (Vgs):
20 V
Input Capacitance:
50 pF
Max Junction Temperature (Tj):
150 C
Max Operating Temperature:
150 C
Max Power Dissipation:
200 mW
Min Breakdown Voltage:
50 V
Min Operating Temperature:
-55 C
Nominal Vgs:
1.2 V
Number of Channels:
2
Resistance:
3.5 Ohm
Voltage Rating (DC):
50 V

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

Resources:

Datasheet

BSS138DW-7-F - Dual N-Channel MOSFET Array | 50V, 200mA | SOT-363 Package

The BSS138DW-7-F from Diodes Incorporated is a dual N-Channel enhancement mode MOSFET array designed for compact, high-efficiency load switching and signal routing applications. Each MOSFET in the array offers a drain-source voltage (V DS) of 50V, a continuous drain current of 200mA, and low on-resistance (R DS(on)) for minimal power loss. With fast switching capability, low input capacitance, and low gate threshold voltage, this device ensures high-speed, low-power operation—making it ideal for use in portable, consumer, and industrial electronics. Housed in a miniature SOT-363 (SC-70-6) package, the BSS138DW-7-F saves PCB space while maintaining excellent thermal and electrical performance.

Key Features

  • Type: Dual N-Channel enhancement mode MOSFET array
  • Configuration: Two independent N-Channel transistors
  • Voltage Rating: 50V drain-to-source voltage (V DS) per channel
  • Current Rating: 200mA continuous drain current per channel
  • Power Dissipation: 235mW (per device)
  • Low On-Resistance (R DS(on)): Ensures efficient conduction with reduced power loss
  • Low Gate Threshold Voltage: Enables easy logic-level operation from TTL and CMOS control signals
  • Fast Switching Speed: Suitable for high-frequency and high-efficiency switching circuits
  • Low Input Capacitance: Reduces switching losses and improves overall performance
  • Low Input/Output Leakage: Ensures low standby power consumption
  • Package: Space-saving SOT-363 (SC-70-6) for dense PCB designs
  • Environmental Compliance:
  • Fully Lead-Free and RoHS Compliant
  • Halogen and Antimony Free Green Device
  • Reliability: Qualified to JEDEC standards for high-reliability applications