Description
The RE1C002UNTCL is an N-channel MOSFET manufactured by Rohm Semiconductor. It operates with a drain-to-source voltage of 20V and can handle a continuous drain current of 200mA at 25°C. This MOSFET utilizes metal oxide technology. The maximum on-resistance (Rds On) is 1.2Ohm at 100mA and a gate-source voltage (Vgs) of 2.5V. The threshold voltage (Vgs(th)) is 1V at 1mA, and the maximum gate-source voltage (Vgs) is +-8V. It has an input capacitance (Ciss) of 25 pF at 10V drain-source voltage (Vds). The MOSFET operates within a temperature range of up to 150C.
Features
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Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
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Product Status: Active
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FET Type: N-Channel
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Technology: MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss): 20 V
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Continuous Drain Current (Id) @ 25C: 200mA (Ta)
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Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
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Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 2.5V
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Vgs(th) (Max) @ Id: 1V @ 1mA
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Vgs (Max): +-8V
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Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
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Power Dissipation (Max): 150mW (Ta)
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Operating Temperature: 150C (TJ)
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Mounting Type: Surface Mount
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