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2N7002E-7-F - MOSFET N-Channel 60V 250mA SOT-23-3

Diodes Incorporated

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SKU:
010-2N7002E-7-F
MPN:
2N7002E-7-F
Full Reel:
3000 (order in multiples of this to receive standard manufacturer packaging)
2N7002E-7-F N-Channel MOSFET 60V 250mA SOT-23-3 Package by Diodes Incorporated
Quantity
Unit Price (ex. GST)
1 - 9
₹ 5.75
10 - 99
₹ 5.17
100 - 999
₹ 4.89
1000 or above
₹ 4.60
2N7002E-7-F is a 60V, 250mA N-Channel MOSFET by Diodes Incorporated featuring low RDS(on), fast switching, low capacitance, and low leakage in a compact SOT-23-3 package. Ideal for load switching, signal control, and power management applications. View full description
  • 100% Original Products
  • GST Invoice
  • Earn 3% Cashback
₹6.79 inc. GST
₹5.75 ex. GST

Technical Specifications

Brand:
Diodes Incorporated
Case/Package:
SOT-23-3
Mount:
Surface Mount
Number of Pins:
3
Continuous Drain Current (ID):
250 mA
Drain To Source Breakdown Voltage:
60 V
Drain To Source Resistance:
3 Ohm
Drain To Source Voltage (Vdss):
60 V
Element Configuration:
Single
Gate To Source Voltage (Vgs):
20 V
Input Capacitance:
50 pF
Max Operating Temperature:
150 C
Max Power Dissipation:
540 mW
Min Breakdown Voltage:
60 V
Min Operating Temperature:
-55 C
Number of Channels:
1
Power Dissipation:
540 mW
Resistance:
4 Ohm
Full Reel Quantity:
3000

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

Resources:

Datasheet

2N7002E-7-F - N-Channel MOSFET | 60V, 250mA, 350mW | SOT-23-3 Package

The 2N7002E-7-F from Diodes Incorporated is a high-performance N-Channel enhancement mode MOSFET designed for signal switching, load control, and power management in compact electronic systems. With a drain-source voltage (V DS) of 60V, a continuous drain current of 250mA, and power dissipation up to 350mW, this device offers efficient switching performance and reliable operation. Engineered using advanced planar technology, it ensures low on-resistance (R DS(on)), low gate charge, and fast switching speed, making it ideal for high-speed circuits and low-power applications. The SOT-23-3 surface-mount package enables space-saving integration in modern circuit designs.

Key Features

  • Type: N-Channel enhancement mode MOSFET
  • Voltage Rating: 60V drain-to-source voltage (V DS)
  • Current Rating: 250mA continuous drain current
  • Power Dissipation: Up to 350mW for compact designs
  • Low On-Resistance (R DS(on)): Ensures efficient conduction and minimal energy loss
  • Low Gate Threshold Voltage: Supports logic-level drive for direct TTL/CMOS interfacing
  • Fast Switching Speed: Enables high-frequency operation in control and driver circuits
  • Low Input Capacitance: Improves switching efficiency and reduces delay
  • Low Input/Output Leakage: Provides stable and efficient performance
  • Package: Compact SOT-23-3 package for high-density PCB layouts

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