Name: ZXMP6A13FTA - MOSFET P-Channel 60V 900mA SOT-23-3
Brand: Diodes Incorporated
SKU: 010-ZXMP6A13FTA
Price: 33.58 INR
Availability: InStock

Technical Specifications

Brand:

Diodes Incorporated

Case/Package:

SOT-23

Mount:

Surface Mount

Number Of Pins:

Continuous Drain Current (ID):

900 mA

Current Rating:

-1.1 A

Drain To Source Breakdown Voltage:

-60 V

Drain To Source Resistance:

400 milliohm

Drain To Source Voltage (Vdss):

-60 V

Element Configuration:

Single

Fall Time:

5.7 ns

Gate To Source Voltage (Vgs):

20 V

Input Capacitance:

219 pF

Max Junction Temperature (Tj):

150 C

Max Operating Temperature:

150 C

Max Power Dissipation:

625 mW

Min Breakdown Voltage:

60 V

Min Operating Temperature:

-55 C

Number Of Channels:

Rds On Max:

400 milliohm

Resistance:

600 milliohm

Rise Time:

2.2 ns

Voltage Rating (DC):

-60 V

Full Reel Quantity:

3000

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

Resources:

Datasheet

ZXMP6A13FTA - P-Channel Power MOSFET | -60V, -900mA, 1W | SOT-23-3 Package

The ZXMP6A13FTA from Diodes Incorporated is a high-performance P-Channel enhancement mode Power MOSFET designed for efficient load switching, power management, and DC-DC converter applications. Utilizing advanced trench MOSFET technology, it delivers low on-state resistance (R DS(on)), fast switching speed, and low gate charge, ensuring superior efficiency in compact, low-voltage systems. With a drain-source voltage (V DS) of -60V, a continuous drain current of -900mA, and power dissipation up to 1W, the ZXMP6A13FTA provides reliable and efficient performance in a compact SOT-23-3 package, making it ideal for space-constrained designs requiring high efficiency and stability.

Key Features

Type: P-Channel enhancement mode Power MOSFET
Voltage Rating: −60V drain-to-source voltage (V DS)
Current Rating: −900mA continuous drain current
Power Dissipation: Up to 1W for improved heat management
Low On-Resistance (R DS(on)): Reduces power losses and improves efficiency
Fast Switching Speed: Enables use in high-frequency applications for rapid response
Low Gate Charge (Q g): Reduces switching losses for efficient operation
Low Input Capacitance: Ensures high-speed performance in compact power circuits
Low Input/Output Leakage: Enhances reliability in standby and low-power conditions
Package Type: Small SOT-23-3 surface-mount package for space-efficient PCB layouts.