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RE1C002UNTCL - N-Channel 20V 200mA MOSFET SOT-416FL

Rohm Semiconductor

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SKU:
143-RE1C002UNTCL
MPN:
RE1C002UNTCL
RE1C002UNTCL - N-Channel 20V 200mA MOSFET (Metal Oxide) - Rohm Semiconductor
Quantity
Unit Price (ex. GST)
1 - 9
₹ 6.90
10 - 99
₹ 6.21
100 - 999
₹ 5.52
1000 or above
₹ 4.83
Minimum Purchase:
5 units
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₹8.14 inc. GST
₹6.90 ex. GST
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Technical Specifications

Brand:
Rohm Semiconductor
Mount:
Surface Mount
Number of Pins:
3
Case/Package:
SOT-416FL
Average Rectified Current:
100 mA
Current Rating:
200 mA
Forward Current:
100 mA
Forward Voltage:
1.2 V
Max Operating Temperature:
150 C
RoHS:
Compliant
Voltage Rating (DC):
20 V
Capicitance:
25pF

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

The RE1C002UNTCL is an N-channel MOSFET manufactured by Rohm Semiconductor. It operates with a drain-to-source voltage of 20V and can handle a continuous drain current of 200mA at 25°C. This MOSFET utilizes metal oxide technology. The maximum on-resistance (Rds On) is 1.2Ohm at 100mA and a gate-source voltage (Vgs) of 2.5V. The threshold voltage (Vgs(th)) is 1V at 1mA, and the maximum gate-source voltage (Vgs) is +-8V. It has an input capacitance (Ciss) of 25 pF at 10V drain-source voltage (Vds). The MOSFET operates within a temperature range of up to 150C.

Features
  • Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Continuous Drain Current (Id) @ 25C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 2.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Vgs (Max): +-8V
  • Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
  • Power Dissipation (Max): 150mW (Ta)
  • Operating Temperature: 150C (TJ)
  • Mounting Type: Surface Mount
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