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NTS2101PT1G - MOSFET P-Channel 8V 1.4A SOT323-3

onsemi

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SKU:
042-NTS2101PT1G
MPN:
NTS2101PT1G
Full Reel:
3000 (order in multiples of this to receive standard manufacturer packaging)
Quantity
Unit Price (ex. GST)
1 - 9
₹ 11.95
10 - 99
₹ 10.76
100 - 999
₹ 10.16
1000 or above
₹ 9.56
NTS2101PT1G is a −8V, −1.4A P-Channel MOSFET by onsemi featuring low RDS(on), −1.8V gate drive, and high switching speed in a compact SOT-323 (SC-70) package. Ideal for portable, low-voltage, and battery-powered devices. View full description
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₹14.10 inc. GST
₹11.95 ex. GST
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Technical Specifications

Brand:
onsemi
Case/Package:
SOT-323-3
Number of Pins:
3
Continuous Drain Current (ID):
1.4 A
Current Rating:
-1.4 A
Drain To Source Breakdown Voltage:
-8 V
Drain To Source Resistance:
100 Milliohm
Fall Time:
15 ns
Gate to Source Voltage (Vgs):
8 V
Input Capacitance:
640 pF
Max Operating Temperature:
150 C
Max Power Dissipation:
960 mW
Min Breakdown Voltage:
8 V
Min Operating Temperature:
-55 C
Nominal Vgs:
-700 mV
Power Dissipation:
290 mW
Resistance:
65 Milliohm
Rise Time:
15 ns
Voltage Rating (DC):
-8 V
Full Reel Quantity:
3000

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

Resources:

Datasheet

NTS2101PT1G - P-Channel MOSFET | -8V, -1.4A | SOT-323 (SC-70) Package

The NTS2101PT1G from onsemi is a compact, high-efficiency P-Channel MOSFET designed using advanced trench technology to deliver ultra-low on-resistance (R DS(on)) and exceptional switching performance. Optimized for battery-powered and portable applications, this device operates with a drain-source voltage (V DS) of -8V and a continuous drain current of -1.4A, ensuring efficient power management and longer battery life. The −1.8V gate drive capability allows for direct interface with low-voltage logic systems, making it an excellent choice for compact consumer and handheld electronics. Packaged in a tiny SOT-323 (SC-70) footprint, the NTS2101PT1G offers high power density, fast switching, and reliable thermal performance.

Key Features

  • Type: P-Channel enhancement mode MOSFET
  • Voltage Rating: −8V drain-to-source voltage (V DS)
  • Current Rating: Continuous drain current of −1.4A
  • Low Gate Drive Voltage: Rated for −1.8V operation, compatible with low-voltage logic control
  • Low On-Resistance (R DS(on)): Enables efficient power delivery and extended battery life
  • High-Speed Switching: Fast response for efficient load switching and signal control
  • Compact Package: Small SOT-323 (SC-70) footprint (2 mmx2 mm) for space-constrained designs
  • Power Efficiency: Optimized for low conduction losses and minimal heat generation
  • Environmental Compliance:
  • Pb-Free, Halogen-Free, BFR-Free
  • RoHS Compliant for sustainable and eco-friendly electronics