MMBTA14LT1G - Bipolar Transistor NPN-Darlington 30V 300mA 125MHz SOT-23-3

onsemi

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SKU:
042-MMBTA14LT1G
MPN:
MMBTA14LT1G
Quantity
Unit Price (ex. GST)
1 - 9
₹ 7.54
10 - 99
₹ 6.79
100 or above
₹ 6.03
NPN Darlington bipolar transistor with 30 volt rating and 300 milliampere current capability suitable for low power switching and control circuits in compact surface mount designs View full description
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Technical Specifications

Brand:
onsemi
Case/Package:
SOT-23-3
Contact Plating:
Tin
Number of Pins:
3
Number of Terminals:
3
Weight:
1.437803 g
Collector Base Voltage (VCBO):
30 V
Collector Emitter Breakdown Voltage:
30 V
Collector Emitter Saturation Voltage:
1.5 V
Collector Emitter Voltage (VCEO):
30 V
Continuous Collector Current:
300 mA
Current Rating:
300 mA
Element Configuration:
Single
Emitter Base Voltage (VEBO):
10 V
hFE Min:
20000
Max Breakdown Voltage:
30 V
Max Collector Current:
300 mA
Max Operating Temperature:
150 C
Max Power Dissipation:
225 mW
Min Operating Temperature:
-55 C
Number of Elements:
1
Packaging:
Tape and Reel
Polarity:
NPN
Power Dissipation:
300 mW
Transition Frequency:
125 MHz
Voltage Rating (DC):
30 V
Height:
940 um
Length:
2.9 mm
Width:
1.3 mm

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

Resources:

Datasheet

High Gain NPN Darlington Bipolar Transistor for Low Power Switching and Signal Control Circuits

The MMBTA14LT1G NPN Darlington bipolar transistor is designed for applications that require very high current gain with minimal base drive. With a collector emitter voltage rating of 30 volt and a continuous collector current of 300 milliampere this transistor is suitable for low power switching driver stages and interface circuits controlled by logic level signals. The Darlington configuration integrates two transistors internally to achieve high amplification efficiency. The SOT 23 3 surface mount package enables compact and reliable PCB designs.

This transistor is commonly used in relay drivers LED drivers signal conditioning stages and general purpose control circuits. Its high transition frequency of 125 megahertz allows responsive switching in low to medium speed applications. The MMBTA14LT1G is widely adopted in consumer electronics industrial control boards and embedded systems where space efficiency and reduced drive requirements are important.

Key Features

  • NPN Darlington Bipolar Transistor
    Provides very high current gain with low base current requirement
  • Efficient Voltage Rating
    Supports circuit operation up to 30 volt
  • Reliable Current Capability
    Designed for collector current up to 300 milliampere
  • Fast Switching Performance
    Transition frequency up to 125 megahertz for responsive operation
  • Compact SOT 23 3 Package
    Ideal for space constrained surface mount PCB layouts