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MBT3904DW1T1G - Bipolar Transistor Dual NPN 40V 200mA 300MHz SC-70-6

onsemi

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SKU:
042-MBT3904DW1T1G
MPN:
MBT3904DW1T1G
Quantity
Unit Price (ex. GST)
1 - 9
₹ 4.52
10 - 99
₹ 4.07
100 or above
₹ 3.62
Dual NPN bipolar transistor with 40 volt rating and 200 milliampere current capability per channel suitable for high frequency signal amplification and fast switching in compact surface mount designs View full description
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Technical Specifications

Brand:
onsemi
Case/Package:
SOT-363-6
Contact Plating:
Tin
Number of Pins:
6
Number of Terminals:
6
Collector Base Voltage (VCBO):
60 V
Collector Emitter Breakdown Voltage:
40 V
Collector Emitter Saturation Voltage:
300 mV
Collector Emitter Voltage (VCEO):
40 V
Current Rating:
200 mA
Element Configuration:
Dual
Emitter Base Voltage (VEBO):
6 V
Frequency:
300 MHz
Gain Bandwidth Product:
300 MHz
hFE Min:
30
Max Breakdown Voltage:
40 V
Max Collector Current:
200 mA
Max Frequency:
300 MHz
Max Operating Temperature:
150 C
Max Power Dissipation:
150 mW
Min Operating Temperature:
-55 C
Number of Elements:
2
Packaging:
Tape and Reel
Polarity:
NPN
Power Dissipation:
150 mW
Transition Frequency:
300 MHz
Type:
General Purpose
Voltage Rating (DC):
40 V
Height:
990.6 um
Length:
2.1844 mm
Width:
1.3462 mm

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

Resources:

Datasheet

Dual NPN Bipolar Transistor for High Frequency Signal Amplification and Compact Switching Designs

The MBT3904DW1T1G dual NPN bipolar transistor integrates two matched NPN transistors in a single compact package for space efficient circuit designs. With a collector emitter voltage rating of 40 volt and a continuous collector current of 200 milliampere per transistor this device is suitable for signal amplification differential pairs and fast switching applications. The SC 70 6 surface mount package enables high density PCB layouts while maintaining consistent electrical performance.

This dual transistor is commonly used in RF signal paths audio amplification stages logic level interfacing and general purpose switching circuits. The high transition frequency of 300 megahertz supports fast signal response and clean amplification in medium to high speed designs. The MBT3904DW1T1G is well suited for consumer electronics communication modules and embedded systems where compact size and matched transistor characteristics are required.

Key Features

  • Dual NPN Bipolar Transistor
    Two matched NPN transistors in a single package for compact designs
  • High Frequency Performance
    Supports fast signal operation up to 300 megahertz
  • Stable Voltage Rating
    Designed for circuits operating up to 40 volt
  • Reliable Current Handling
    Supports collector current up to 200 milliampere per transistor
  • Compact SC 70 6 Package
    Ideal for space constrained surface mount PCB applications