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DMN26D0UT-7 - MOSFET N-Channel 20V 230mA SOT-523-3

Diodes Incorporated

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SKU:
010-DMN26D0UT-7
MPN:
DMN26D0UT-7
Full Reel:
3000 (order in multiples of this to receive standard manufacturer packaging)
DMN26D0UT-7 20V N-Channel Power MOSFET by Diodes Incorporated in SOT-523-3 package
Quantity
Unit Price (ex. GST)
1 - 9
₹ 5.32
10 - 99
₹ 4.79
100 - 999
₹ 4.52
1000 or above
₹ 4.26
DMN26D0UT-7 is a 20V, 230mA N-channel Power MOSFET from Diodes Incorporated featuring ultra-low Rds(on), 1.0V gate threshold, fast switching, and ESD protection in an ultra-small SOT-523-3 package for portable power systems. View full description
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Technical Specifications

Brand:
Diodes Incorporated
Case/Package:
SOT-523
Mount:
Surface Mount
Number of Pins:
3
Continuous Drain Current (ID):
230 mA
Drain To Source Breakdown Voltage:
20 V
Drain To Source Resistance:
3 Ohm
Drain To Source Voltage (Vdss):
20 V
Element Configuration:
Single
Fall Time:
15.2 ns
Gate To Source Voltage (Vgs):
10 V
Input Capacitance:
14.1 pF
Max Junction Temperature (Tj):
150 C
Max Operating Temperature:
150 C
Max Power Dissipation:
300 mW
Min Breakdown Voltage:
20 V
Min Operating Temperature:
-55 °C
Number of Channels:
1
Resistance:
3 Ohm
Rise Time:
7.9 ns
Full Reel Quantity:
3000

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

Resources:

Datasheet

DMN26D0UT-7 – 20V N-Channel Power MOSFET (SOT-523-3 Package)

The DMN26D0UT-7 from Diodes Incorporated is an ultra-compact, high-efficiency N-channel Power MOSFET designed for low-voltage, high-speed switching applications. With a drain-source voltage (V DS) of 20V and a continuous drain current (I D) of 230mA, this device provides excellent switching performance while maintaining very low on-state resistance. The MOSFET features low R DS(on) values of 3.0Ω at 4.5V, 4.0Ω at 2.5V, 6.0Ω at 1.8V, and 10Ω at 1.5V, ensuring efficient operation even at low gate drive voltages. With a very low gate threshold voltage (1.0V max), low input capacitance, fast switching speed, and ESD-protected gate, it is ideal for portable, battery-powered, and space-limited designs. The SOT-523-3 package makes it perfect for miniature power-management and signal-switching circuits.

Key Features

  • Drain-Source Voltage (V DS): 20V for low-voltage applications
  • Continuous Drain Current (ID): 230mA for low-power switching circuits

  • Low On-Resistance (R DS(on)):

    • 3.0 Ohm V GS = 4.5V

    • 4.0 Ohm V GS = 2.5V

    • 6.0 Ohm V GS = 1.8V

    • 10 Ohm V GS = 1.5V

  • Low Gate Threshold Voltage: 1.0V max for logic-level drive capability
  • Fast Switching Speed: Optimized for high-frequency operation
  • Low Input Capacitance: Reduces switching losses and drive requirements
  • ESD Protected Gate: Enhances device robustness and reliability
  • Ultra-Small SOT-523-3 Package: Perfect for compact and high-density PCB layouts
  • Applications: Portable electronics, DC-DC converters, load switches, signal switching, battery-powered systems.

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