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BSS138W-7-F - MOSFET N-Channel 50V 200mA SOT-323-3

Diodes Incorporated

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SKU:
010-BSS138W-7-F
MPN:
BSS138W-7-F
Full Reel:
3000 (order in multiples of this to receive standard manufacturer packaging)
Quantity
Unit Price (ex. GST)
1 - 9
₹ 5.94
10 - 99
₹ 5.35
100 - 999
₹ 5.05
1000 or above
₹ 4.75
BSS138W-7-F is a 50V, 200mA N-Channel MOSFET by Diodes Incorporated featuring low RDS(on), fast switching, and low capacitance in a compact SOT-323 (SC-70) package. Ideal for logic-level, load switching, and portable power management applications. View full description
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Technical Specifications

Brand:
Diodes Incorporated
Case/Package:
SOT-323
Mount:
Surface Mount
Number of Pins:
3
Continuous Drain Current (ID):
200 mA
Current:
2 A
Drain To Source Breakdown Voltage:
75 V
Drain To Source Resistance:
3.5 Ohm
Drain To Source Voltage (Vdss):
50 V
Dual Supply Voltage:
50 V
Element Configuration:
Single
Gate To Source Voltage (Vgs):
20 V
Input Capacitance:
50 pF
Max Operating Temperature:
150 C
Max Power Dissipation:
200 mW
Min Breakdown Voltage:
50 V
Min Operating Temperature:
-55 C
Nominal Vgs:
1.2 V
Number of Channels:
1
Resistance:
3.5 Ohm
Voltage:
50 V
Full Reel Quantity:
3000

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

Resources:

Datasheet

BSS138W-7-F - N-Channel MOSFET | 50V, 200mA, 350mW | SOT-323 (SC-70) Package

The BSS138W-7-F from Diodes Incorporated is a compact, high-performance N-Channel enhancement mode MOSFET designed for efficient signal switching, load control, and level shifting applications. With a drain-source voltage (V DS) of 50V, a continuous drain current of 200mA, and power dissipation up to 350mW, this device ensures excellent energy efficiency in small form-factor electronic designs. Built using advanced planar technology, it provides low on-resistance (R DS(on)), fast switching speed, and low gate threshold voltage, making it ideal for logic-level circuits and portable power management systems. Its SOT-323 (SC-70) package offers high-density PCB integration while maintaining superior electrical performance.

Key Features

  • Type: N-Channel enhancement mode MOSFET
  • Voltage Rating: 50V drain-to-source voltage (V DS)
  • Current Rating: 200mA continuous drain current
  • Power Dissipation: 350mW for compact applications
  • Low On-Resistance (R DS(on)): Reduces conduction losses and improves power efficiency
  • Low Gate Threshold Voltage: Enables direct logic-level (TTL/CMOS) control
  • Fast Switching Speed: Ensures efficient operation in high-speed circuits
  • Low Input Capacitance: Minimizes switching losses and enhances performance
  • Low Input/Output Leakage: Improves stability and energy efficiency
  • Package: Ultra-small SOT-323 (SC-70) surface-mount package for high-density designs.