null

BSS138K-13 - MOSFET N-Channel 50V 310mA SOT-23-3

Diodes Incorporated

No reviews yet Write a Review
SKU:
010-BSS138K-13
MPN:
BSS138K-13
Full Reel:
10000 (order in multiples of this to receive standard manufacturer packaging)
BSS138K-13 N-Channel MOSFET 50V 310mA SOT-23-3 Package by Diodes Incorporated
Quantity
Unit Price (ex. GST)
1 - 9
₹ 7.60
10 - 99
₹ 6.84
100 - 999
₹ 6.46
1000 or above
₹ 6.08
BSS138K-13 is a 50V, 310mA N-Channel MOSFET by Diodes Incorporated featuring low RDS(on), low capacitance, and fast switching speed in a compact SOT-23-3 package. Ideal for load switching, signal control, and high-efficiency power management. View full description
  • 100% Original Products
  • GST Invoice
  • Earn 3% Cashback
₹8.97 inc. GST
₹7.60 ex. GST

Technical Specifications

Brand:
Diodes Incorporated
Case/Package:
SOT-23-3
Number Of Pins:
3
Continuous Drain Current (ID):
310 mA
Drain To Source Resistance:
3.5 Ohm
Max Operating Temperature:
150 C
Max Power Dissipation:
540 mW
Min Breakdown Voltage:
50 V
Min Operating Temperature:
-55 C
Full Reel Quantity:
10000

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

Resources:

Datasheet 

BSS138K-13 - N-Channel MOSFET | 50V, 310mA, 350mW | SOT-23-3 Package

The BSS138K-13 from Diodes Incorporated is a high-efficiency N-Channel enhancement mode MOSFET designed for load switching, signal control, and power management in compact electronic systems. Developed using advanced trench MOSFET technology, it delivers low on-resistance (R DS(on)), fast switching performance, and low input capacitance, ensuring excellent power efficiency and reliability. With a drain-source voltage (V DS) of 50V, a continuous drain current of 310mA, and power dissipation up to 350mW, this MOSFET provides stable and efficient operation in small-form-factor circuits. The SOT-23-3 surface-mount package allows easy PCB integration for space-limited designs.

Key Features

  • Type: N-Channel enhancement mode MOSFET
  • Voltage Rating: 50V drain-to-source voltage (V DS)
  • Current Rating: 310mA continuous drain current
  • Power Dissipation: Up to 350mW for compact thermal operation
  • Low On-Resistance (R DS(on)): Reduces power loss and enhances energy efficiency
  • Low Input Capacitance: Optimized for high-speed switching and minimal driver losses
  • Fast Switching Speed: Enables efficient operation in power management and signal control circuits
  • Low Leakage Current: Ensures stable and reliable system performance
  • Package Type: Compact SOT-23-3 for high-density PCB layouts.

Related Products