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BSS138-7-F - MOSFET N-Channel 50V 200mA SOT-23-3

Diodes Incorporated

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SKU:
010-BSS138-7-F
MPN:
BSS138-7-F
Full Reel:
3000 (order in multiples of this to receive standard manufacturer packaging)
Quantity
Unit Price (ex. GST)
1 - 9
₹ 3.64
10 - 99
₹ 3.28
100 - 999
₹ 3.09
1000 or above
₹ 2.91
BSS138-7-F is a 50V, 200mA N-Channel MOSFET by Diodes Incorporated featuring low RDS(on), low gate threshold, fast switching, and low leakage in a compact SOT-23-3 package. Ideal for load switching and power management systems. View full description
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₹3.64 ex. GST
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Technical Specifications

Brand:
Diodes Incorporated
Case/Package:
SOT-23
Mount:
Surface Mount
Number of Pins:
3
Continuous Drain Current (ID):
200 mA
Current:
2 A
Current Rating:
200 mA
Drain To Source Breakdown Voltage:
50 V
Drain To Source Resistance:
3.5 Ohm
Drain To Source Voltage (Vdss):
50 V
Fall Time:
25 ns
Gate To Source Voltage (Vgs):
20 V
Input Capacitance:
50 pF
Max Junction Temperature (Tj):
150 C
Max Operating Temperature:
150 C
Max Power Dissipation:
300 mW
Min Breakdown Voltage:
50 V
Min Operating Temperature:
-55 C
Nominal Vgs:
1.2 V
Number of Channels:
1
Power Dissipation:
300 mW
Resistance:
3.5 Ohm
Voltage:
50 V
Full Reel Quantity:
3000

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

Resources:

Datasheet

BSS138-7-F - N-Channel MOSFET | 50V, 200mA, 300mW | SOT-23-3 Package

The BSS138-7-F from Diodes Incorporated is a compact and high-efficiency N-Channel enhancement mode MOSFET designed for load switching and power management applications. With a drain-source voltage (V DS) rating of 50V, a continuous drain current of 200mA, and power dissipation up to 300mW, this MOSFET offers excellent performance in compact circuits. Engineered for low on-resistance (RDS(on)), low gate threshold voltage, and fast switching speed, the BSS138-7-F delivers superior efficiency and response time in both digital and analog designs. Its low input capacitance and leakage current make it suitable for signal switching, logic-level interface, and high-speed systems.

Key Features

  • Type: N-Channel enhancement mode MOSFET
  • Voltage Rating: 50V drain-to-source voltage (V DS)
  • Current Rating: Continuous drain current of 200mA
  • Power Dissipation: Up to 300mW
  • Low On-Resistance (R DS(on)): Ensures efficient conduction with minimal losses
  • Low Gate Threshold Voltage: Ideal for direct logic-level (TTL/CMOS) drive without additional components
  • Low Input Capacitance: Enables fast switching and efficient signal response
  • Fast Switching Speed: Suitable for high-frequency power and control applications
  • Low Leakage Current: Enhances reliability in low-current and standby conditions
  • Package: Compact SOT-23-3 for high-density surface-mount designs
  • Environmental Compliance:

    • Totally Lead-Free and RoHS Compliant

    • Halogen and Antimony Free Green Device

  • Reliability: Qualified to JEDEC standards (referenced in AEC-Q) for high reliability applications