Name: 2N7002W-7-F - MOSFET N-Channel 60V 115mA SOT-323-3
Brand: Diodes Incorporated
SKU: 010-2N7002W-7-F
Price: 7.88 INR
Availability: InStock

Technical Specifications

Brand:

Diodes Incorporated

Case/Package:

SOT-323

Mount:

Surface Mount

Number Of Pins:

Continuous Drain Current (ID):

115 mA

Drain To Source Breakdown Voltage:

70 V

Drain To Source Resistance:

7.5 Ohm

Drain To Source Voltage (Vdss):

60 V

Dual Supply Voltage:

60 V

Element Configuration:

Single

Gate To Source Voltage (Vgs):

20 V

Input Capacitance:

50 pF

Max Junction Temperature (Tj):

150 C

Max Operating Temperature:

150 C

Max Power Dissipation:

200 mW

Min Breakdown Voltage:

60 V

Min Operating Temperature:

-55 C

Nominal Vgs:

2 V

Number Of Channels:

Rds On Max:

7.5 Ohm

Voltage Rating (DC):

60 V

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

Resources:

Datasheet

2N7002W-7-F - N-Channel MOSFET | 60V, 115mA, 350mW | SOT-323 (SC-70) Package

The 2N7002W-7-F from Diodes Incorporated is a compact and efficient N-Channel enhancement mode MOSFET designed for motor control, power management, and other high-efficiency switching applications. Developed using advanced trench MOSFET technology, it offers low on-resistance (R DS(on)), fast switching speed, and low input capacitance, ensuring high performance in low-power, space-constrained designs. With a drain-source voltage (V DS) of 60V, a continuous drain current of 115mA, and power dissipation up to 350mW, this MOSFET is ideal for low-voltage switching, signal control, and compact electronic circuits. The SOT-323 (SC-70) package provides superior electrical and thermal performance while minimizing board space usage.

Key Features

Type: N-Channel enhancement mode MOSFET
Voltage Rating: 60V drain-to-source voltage (V DS)
Current Rating: 115mA continuous drain current
Power Dissipation: Up to 350mW for compact applications
Low On-Resistance (R DS(on)): Reduces conduction losses for higher efficiency
Low Gate Threshold Voltage: Compatible with logic-level drive circuits
Low Input Capacitance: Enables fast switching and high-frequency operation
Fast Switching Speed: Ideal for high-efficiency power conversion and control circuits
Low Input/Output Leakage: Ensures stable and reliable performance under all load conditions
Package Type: Ultra-small SOT-323 (SC-70) surface-mount package for compact PCB layouts.