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2N7002K-7 - MOSFET N-Channel 60V 380mA 370mW SOT-23-3

Diodes Incorporated

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SKU:
010-2N7002K-7
MPN:
2N7002K-7
Full Reel:
3000 (order in multiples of this to receive standard manufacturer packaging)
2N7002K-7 N-Channel MOSFET 60V 380mA 370mW SOT-23-3 Package by Diodes Incorporated
Quantity
Unit Price (ex. GST)
1 - 9
₹ 3.74
10 - 99
₹ 3.37
100 - 999
₹ 3.18
1000 or above
₹ 2.99
2N7002K-7 is a 60V, 380mA N-Channel MOSFET by Diodes Incorporated with low RDS(on), fast switching, low input capacitance, and 370mW power dissipation in a compact SOT-23-3 package. Ideal for power management and motor control. View full description
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Technical Specifications

Brand:
Diodes Incorporated
Case/Package:
SOT-23
Mount:
Surface Mount
Number of Pins:
3
Continuous Drain Current (ID):
300 mA
Drain To Source Breakdown Voltage:
60 V
Drain To Source Resistance:
2Ohm
Drain To Source Voltage (Vdss):
60 V
Fall Time:
9.9 ns
Gate To Source Voltage (Vgs):
20 V
Input Capacitance:
50 pF
Max Operating Temperature:
150 C
Max Power Dissipation:
350 mW
Min Breakdown Voltage:
60 V
Min Operating Temperature:
-55 C
Nominal Vgs:
1.6 V
Number of Channels:
1
Resistance:
2Ohm
Rise Time:
3.4 ns
Full Reel Quantity:
3000

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

Resources:

Datasheet

2N7002K-7 - N-Channel MOSFET | 60V, 380mA, 370mW | SOT-23-3 Package

The 2N7002K-7 from Diodes Incorporated is a high-performance N-Channel enhancement mode MOSFET designed for efficient switching and power management applications. With a drain-source voltage (V DS) rating of 60V, a continuous drain current of 380mA, and a power dissipation of 370mW, this compact transistor ensures reliable operation in space-constrained designs. Engineered for low on-resistance (R DS(on)), low input capacitance, and fast switching speeds, the 2N7002K-7 delivers high efficiency and excellent signal integrity in digital and analog circuits. Its compact SOT-23-3 surface-mount package and low gate charge make it ideal for portable, battery-powered, and high-density applications such as DC-DC converters, motor control circuits, and backlighting systems.

Key Features

  • Type: N-Channel enhancement mode MOSFET
  • Voltage Rating: 60V drain-to-source voltage (V DS)
  • Current Rating: Continuous drain current of 380mA
  • Power Dissipation: Up to 370mW
  • Low On-Resistance: Ensures efficient conduction and minimal power loss
  • Low Input Capacitance: Improves signal speed and reduces switching loss
  • Fast Switching Speed: Ideal for high-frequency power management and signal applications
  • Low Leakage Current: Enhances stability and efficiency in standby conditions
  • Package Type: Compact SOT-23-3 package for surface-mount applications
  • Applications: Suitable for motor control, power management, LED backlighting, and level shifting circuits
  • Environmental Compliance: RoHS compliant and halogen-free design

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