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2N7002DW-7-F - MOSFET 2N-Channel 60V 230mA 2N-Ch SOT-363

Diodes Incorporated

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SKU:
010-2N7002DW-7-F
MPN:
2N7002DW-7-F
Full Reel:
3000 (order in multiples of this to receive standard manufacturer packaging)
2N7002DW-7-F Dual N-Channel MOSFET Array 60V 230mA SOT-363 Package by Diodes Incorporated
Quantity
Unit Price (ex. GST)
1 - 9
₹ 5.75
10 - 99
₹ 5.17
100 - 999
₹ 4.89
1000 or above
₹ 4.60
2N7002DW-7-F is a dual 60V, 230mA N-Channel MOSFET array by Diodes Incorporated featuring low RDS(on), fast switching, low capacitance, and low leakage in an ultra-small SOT-363 package. Ideal for logic-level and power management applications. View full description
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₹5.75 ex. GST
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Technical Specifications

Brand:
Diodes Incorporated
Case/Package:
SOT-363
Mount:
Surface Mount
Number of Pins:
6
Continuous Drain Current (ID):
115 mA
Drain To Source Breakdown Voltage:
70 V
Drain To Source Resistance:
7.5 Ohm
Drain To Source Voltage (Vdss):
60 V
Dual Supply Voltage:
60 V
Element Configuration:
Dual
Gate To Source Voltage (Vgs):
20 V
Input Capacitance:
50 pF
Max Junction Temperature (Tj):
150 C
Max Operating Temperature:
150 C
Max Power Dissipation:
200 mW
Min Breakdown Voltage:
60 V
Min Operating Temperature:
-55 C
Nominal Vgs:
2 V
Number of Channels:
2
Power Dissipation:
310 mW
Resistance:
7.5 Ohm
Voltage Rating (DC):
60 V
Full Reel Quantity:
3000

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

Resources:

Datasheet

2N7002DW-7-F - Dual N-Channel MOSFET Array | 60V, 230mA | SOT-363 Package

The 2N7002DW-7-F from Diodes Incorporated is a compact dual N-Channel enhancement mode MOSFET array designed for high-efficiency switching, signal routing, and load control applications. Each channel offers a drain-source voltage (V DS) of 60V, a drain current of 230mA, and low on-resistance (R DS(on)), ensuring efficient operation with minimal power loss. Built using advanced MOSFET technology, the 2N7002DW-7-F combines fast switching, low gate threshold voltage, and low input capacitance, making it suitable for use in logic-level, signal, and low-power switching applications. Packaged in an ultra-small SOT-363 (SC-70-6) footprint, it is ideal for high-density and space-constrained electronic designs.

Key Features

  • Type: Dual N-Channel enhancement mode MOSFET
  • Configuration: Two independent N-Channel MOSFETs in one package
  • Voltage Rating: 60V drain-to-source voltage (V DS) per channel
  • Current Rating: Continuous drain current of 230mA per channel
  • Low On-Resistance (R DS(on)): Ensures low conduction losses for high efficiency
  • Low Gate Threshold Voltage: Allows easy drive from logic-level signals (TTL/CMOS compatible)
  • Fast Switching Speed: Ideal for high-speed and high-frequency applications
  • Low Input Capacitance: Reduces switching losses and enhances responsiveness
  • Low Leakage Current: Maintains efficiency and stability in low-power circuits
  • Package: SOT-363 (SC-70-6) ultra-small surface-mount package for compact PCB layouts

  • Environmental Compliance:

    • Lead-Free and RoHS Compliant

    • Halogen- and Antimony-Free Green Device

  • Reliability: Qualified to JEDEC standards for high-reliability performance

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