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2N7002-7-F - MOSFET N-Channel 60V 115mA SOT-23-3

Diodes Incorporated

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SKU:
010-2N7002-7-F
MPN:
2N7002-7-F
Quantity
Unit Price (ex. GST)
1 - 9
₹ 3.43
10 - 99
₹ 3.09
100 - 999
₹ 2.92
1000 or above
₹ 2.74
2N7002-7-F is a 60V, 115mA N-Channel MOSFET by Diodes Incorporated featuring low RDS(on), fast switching, low input capacitance, and low leakage in a compact SOT-23-3 package. Ideal for logic-level and power management applications. View full description
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Technical Specifications

Brand:
Diodes Incorporated
Case/Package:
SOT-23
Mount:
Surface Mount
Number of Pins:
3
Continuous Drain Current (ID):
115 mA
Drain To Source Breakdown Voltage:
70 V
Drain To Source Resistance:
13.5 Ohm
Drain To Source Voltage (Vdss):
60 V
Dual Supply Voltage:
60 V
Fall Time:
5.6 ns
Gate To Source Voltage (Vgs):
20 V
Input Capacitance:
50 pF
Max Junction Temperature (Tj):
150 C
Max Operating Temperature:
150 C
Max Power Dissipation:
300 mW
Min Breakdown Voltage:
60 V
Min Operating Temperature:
-55 C
Nominal Vgs:
2.5 V
Number of Channels:
1
Resistance:
7.5 Ohm
Voltage:
60 V

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

Resources:

Datasheet

2N7002-7-F - N-Channel MOSFET | 60V, 115mA, 370mW | SOT-23-3 Package

The 2N7002-7-F from Diodes Incorporated is a versatile N-Channel enhancement mode MOSFET optimized for switching, signal processing, and power management applications. Designed for high efficiency, it combines low on-resistance (R DS(on)) fast switching speed, and low input capacitance to ensure superior performance in compact circuits. With a drain-source voltage (V DS) rating of 60V, a drain current of 115mA, and power dissipation up to 370mW, this MOSFET is ideal for load switching, relay driving, and digital interface circuits. The SOT-23-3 surface-mount package makes it well-suited for high-density PCB layouts where space and efficiency are critical.

Key Features

  • Type: N-Channel enhancement mode MOSFET
  • Voltage Rating: 60V drain-to-source voltage (V DS)
  • Current Rating: Continuous drain current of 115mA
  • Power Dissipation: Up to 370mW
  • Low On-Resistance (R DS(on)): Ensures minimal conduction loss and high efficiency
  • Low Gate Threshold Voltage: Enables easy drive from logic-level (TTL/CMOS) circuits
  • Low Input Capacitance: Reduces switching losses and enhances signal performance
  • Fast Switching Speed: Suitable for high-frequency switching and control applications
  • Low Leakage Current: Improves stability and energy efficiency in low-power systems
  • Package: Compact SOT-23-3 surface-mount package for space-saving designs
  • Environmental Compliance:

    • Fully Lead-Free and RoHS Compliant

    • Halogen and Antimony Free Green Device

  • Reliability: Qualified to JEDEC and AEC-Q standards for high-reliability applications