Name: ZXMP10A13FTA - Trans Mosfet P-Cha 100V 600mA SOT-23-3
Brand: Diodes Incorporated
SKU: 010-ZXMP10A13FTA
Price: 40.26 INR
Availability: InStock

Technical Specifications

Brand:

Diodes Incorporated

Case/Package:

SOT-23

Mount:

Surface Mount

Number of Pins:

Continuous Drain Current (ID):

700 mA

Current Rating:

-500 mA

Drain To Source Breakdown Voltage:

-100 V

Drain To Source Resistance:

1 Ohm

Drain to Source Voltage (Vdss):

100 V

Element Configuration:

Single

Fall Time:

3.3 ns

Gate To Source Voltage (Vgs):

20 V

Input Capacitance:

141 pF

Max Operating Temperature:

150 C

Max Power Dissipation:

625 mW

Min Breakdown Voltage:

100 V

Min Operating Temperature:

-55 C

Number of Channels:

Resistance:

1 Ohm

Rise Time:

2.1 ns

Voltage Rating (DC):

-100 V

Full Reel Quantity:

3000

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.

Description

Resources:

Datasheet

ZXMP10A13FTA - P-Channel Power MOSFET | -100V, -600mA, 1W | SOT-23-3 Package

The ZXMP10A13FTA from Diodes Incorporated is a rugged and efficient P-Channel enhancement mode Power MOSFET designed for high-voltage switching, load control, and power management applications. Built with advanced MOSFET process technology, this device offers low on-resistance (R DS(on)), fast switching characteristics, and low gate charge, making it ideal for energy-efficient power systems. With a drain-source voltage (V DS) of -100V, a continuous drain current of -600mA, and power dissipation up to 1W, the ZXMP10A13FTA ensures stable and reliable operation in compact circuit designs. Its SOT-23-3 package allows easy surface mounting and optimal heat dissipation for small form-factor electronics.

Key Features

Type: P-Channel enhancement mode Power MOSFET
Voltage Rating: −100V drain-to-source voltage (V DS)
Current Rating: −600mA continuous drain current
Power Dissipation: Up to 1W for efficient thermal management
Low On-Resistance (R DS(on)): Reduces conduction losses and improves power efficiency
Fast Switching Speed: Ensures quick response and efficient operation in switching circuits
Low Gate Charge (Q g): Optimized for low-power and high-speed drive capability
Low Input Capacitance: Improves high-frequency switching performance
Low Leakage Current: Provides stable operation in standby and low-power modes
Package Type: Compact SOT-23-3 for space-constrained PCB layouts.